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參數資料
| 型號： | K6X8008T2B-Q |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | CMOS SRAM |
| 中文描述： | CMOS SRAM的 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 129K |
| 代理商： | K6X8008T2B-Q |
K6X8008T2B Family
Revision 1.0
September 2003
1
CMOS SRAM
Document Title
1Mx8 bit Low Power and Low Voltage CMOS Static RAM
Revision History
Revision No.
0.0
0.1
1.0
Remark
Preliminary
Preliminary
Final
History
Initial draft
Revised
- Deleted 44-TSOP2-400R package type.
Finalized
- Changed I
CC
2 from 40mA to 30mA
- Changed I
SB
1
(industrial)
from 30
μ
A to 15
μ
A
- Changed I
SB
1
(Automotive)
from 40
μ
A to 25
μ
A
Draft Date
October 31, 2002
December 11, 2002
September 16, 2003
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices.
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