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參數(shù)資料
| 型號(hào)： | K7A403600B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Kx36/x32 & 256Kx18 Synchronous SRAM |
| 中文描述： | 128Kx36/x32 |
| 文件頁(yè)數(shù)： | 1/18頁(yè) |
| 文件大小： | 470K |
| 代理商： | K7A403600B |
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K7A401800B
128Kx36/x32 & 256Kx18 Synchronous SRAM
- 1 -
Rev 1.0
Nov 2001
K7A403200B
K7A403600B
Document Title
128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Final
History
1. Initial draft
1. Changed DC parameters
Icc ; from 350mA to 290mA at -16,
from 330mA to 270mA at -15,
from 300mA to 250mA at -14,
I
SB1
; from 100mA to 80mA
1. Delete Pass-Through
1. Add x32 org. and industrial temperature
1. Final spec release
2. Changed Pin Capacitance
- Cin ; from 5pF to 4pF
- Cout ; from 7pF to 6pF
Draft Date
May. 15. 2001
June. 12. 2001
June.25. 2001
Aug. 11. 2001
Nov. 15. 2001
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev. No
0.0
0.1
0.2
0.3
1.0
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| K7A403600B_06 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx36/x32 & 256Kx18 Synchronous SRAM |
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