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參數資料
| 型號： | K7B803625M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx36 & 512Kx18 Synchronous SRAM |
| 中文描述： | 256Kx36 |
| 文件頁數： | 1/21頁 |
| 文件大?。?/td> | 582K |
| 代理商： | K7B803625M |
K7B801825M
256Kx36 & 512Kx18 Synchronous SRAM
- 1 -
Rev 5.0
November 1999
K7B803625M
Document Title
256Kx36 & 512Kx18-Bit Synchronous Burst SRAM
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Revision History
Rev. No.
0.0
0.1
0.2
0.3
0.4
0.5
1.0
2.0
3.0
4.0
5.0
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Final
Final
Final
Final
Final
History
Initial draft
Change DC Characteristics.
I
SB
value from 60mA to 90mA at -8
I
SB
value from 50mA to 80mA at -9
I
SB
value from 40mA to 70mA at -10
I
SB1
value from 10mA to 30mA
I
SB2
value from 10mA to 30mA
1. Changed t
CD
from 8.0ns to 8.5ns at -8
2. Changed t
CYC
from 13.0ns to 12.0ns at -10
3. Changed DC condition at Icc and parameters
I
CC
; from 300mA to 350mA at -8,
from 260mA to 300mA at -9,
from 220mA to 260mA at -10,
I
SB
; from 90mA to 130mA at -8,
from 80mA to 120mA at -9,
from 70mA to 110mA at -10,
1. A
DD
119BGA(7x17 Ball Grid Array Package) .
2. A
DD
x32 organization.
Add V
DDQ
Supply voltage( 2.5V )
Changed V
OL
Max value from 0.2V to 0.4V at 2.5V I/O.
1. Final Spec Release.
2. Remove x32 organization.
1. Remove V
DDQ
supply voltage(2.5V)
1. Changed I
CC
from 350mA to 330mA at -8.
2. Add bin -7. (tCD 7.5ns).
1. Add V
DDQ
supply voltage(2.5V)
1. Changed tCYC from 12ns to 10ns at -9.
Draft Date
April. 10 . 1998
Aug. 31. 1998
Sep. 09. 1998
Oct. 15. 1998
Dec. 10. 1998
Dec. 23. 1998
Jan. 29. 1999
Feb. 25. 1999
Mar. 30. 1999
May. 13. 1999
Nov. 19. 1999
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