- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374293 > K7J323682M (SAMSUNG SEMICONDUCTOR CO. LTD.) 1Mx36 & 2Mx18 DDR II SIO b2 SRAM PDF資料下載
參數(shù)資料
| 型號： | K7J323682M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Mx36 & 2Mx18 DDR II SIO b2 SRAM |
| 中文描述： | 1Mx36 |
| 文件頁數(shù)： | 1/17頁 |
| 文件大小： | 305K |
| 代理商： | K7J323682M |
1Mx36 & 2Mx18 DDR II SIO b2 SRAM
- 1 -
Rev 2.1
Dec. 2004
K7J323682M
K7J321882M
Document Title
1Mx36-bit, 2Mx18-bit DDR II SIO b2 SRAM
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Revision History
Rev. No.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1.0
2.0
2.1
Remark
Advance
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Final
Final
Final
History
1. Initial document.
1. Pin name change from DLL to Doff
2. Update JTAG test conditions.
3. Reserved pin for high density name change from NC to Vss/SA
4. Delete AC test condition about Clock Input timing Reference Level
5. Delete clock description on page 2 and add HSTL I/O comment
6. Deleted R/W control pin description on page 2
1. Update current characteristics in DC electrical characteristics
2. Change AC timing characteristics
3. Update JTAG instruction coding and diagrams
1. Add AC electrical characteristics.
2. Change AC timing characteristics.
3. Change DC electrical characteristics(I
SB1
)
1. Change the data Setup/Hold time.
2. Change the Access Time.(tCHQV, tCHQX, etc.)
3. Change the Clock Cycle Time.(MAX value of tKHKH)
4. Change the JTAG instruction coding.
1. Change the Boundary scan exit order.
2. Change the AC timing characteristics(-25, -20)
3. Correct the Overshoot and Undershoot timing diagrams.
1. Change the JTAG Block diagram
1. Correct the JTAG ID register definition
2. Correct the AC timing parameter (delete the tKHKH Max value)
1. Change the Maximum Clock cycle time.
2. Correct the 165FBGA package ball size.
1. Final spec release
1. Delete the x8 Org. part
1. Change the operating current parameter
before after
Isb1 -25 : 230 250
-20 : 200 230
-16 : 190 220
Draft Date
July, 15 2001
Dec, 14 2001
July, 29. 2002
Sep. 6. 2002
Oct. 7. 2002
Dec. 16, 2002
Dec. 26, 2002
Mar. 20, 2003
April. 4, 2003
Oct. 31, 2003
Dec. 1, 2003
Dec. 13, 2004
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K7J641882M | 72Mb M-die DDRII SRAM Specification |
| K7J641882M-FC16 | 72Mb M-die DDRII SRAM Specification |
| K7J641882M-FC20 | 72Mb M-die DDRII SRAM Specification |
| K7J641882M-FC25 | 72Mb M-die DDRII SRAM Specification |
| K7J641882M-FC30 | 72Mb M-die DDRII SRAM Specification |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K7-J5 | 制造商:MITSUMI 制造商全稱:Mitsumi Electronics, Corp. 功能描述:Adjustable Type Coils |
| K7J641882M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:72Mb M-die DDRII SRAM Specification |
| K7J641882M-FC16 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:72Mb M-die DDRII SRAM Specification |
| K7J641882M-FC20 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:72Mb M-die DDRII SRAM Specification |
| K7J641882M-FC25 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:72Mb M-die DDRII SRAM Specification |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。