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參數資料
| 型號： | K7N161801M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx36 & 1Mx18-Bit Pipelined NtRAM TM |
| 中文描述： | 512Kx36 |
| 文件頁數： | 1/20頁 |
| 文件大小： | 324K |
| 代理商： | K7N161801M |
512Kx36 & 1Mx18 Pipelined N
t
RAM
TM
- 1 -
Rev 1.0
December 1999
K7N161801M
K7N163601M
Document Title
512Kx36 & 1Mx18-Bit Pipelined N
t
RAM
TM
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Revision History
Rev. No.
0.0
0.1
0.2
0.3
0.4
1.0
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Final
History
1. Initial document.
1. Update ICC & ISB values.
1. Change I
SB
value from 80mA to 110mA at -67.
2. Change I
SB
value from 70mA to 90mA at -72 .
3. Change I
SB
value from 60mA to 80mA at -10 .
1. Change pin allocation at 119BGA .
- A4 ; from NC to A .
- B2 ; from A to CS2
- B4 ; from CKE to ADV
- B6 ; from A to CS2
- G4 ; from ADV to A
- H4 ; from NC to WE
- M4 ; from WE toCKE
2. Changed DC condition at Icc and parameters
Icc ; from 420mA to 400mA at -67,
from 370mA to 380mA at -75,
from 300mA to 320mA at -10,
1. Add tCYC 167MHz.
1. Final Spec Release.
Draft Date
Dec. 22. 1998
May. 27. 1999
Sep. 04. 1999
Nov. 19. 1999
Nov. 26. 1999
Dec. 08. 1999
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