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參數(shù)資料
| 型號： | K7N401809B-QC20 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Kx36 & 256Kx18 Pipelined NtRAMTM |
| 中文描述： | 128K × 36至 |
| 文件頁數(shù)： | 1/18頁 |
| 文件大小： | 387K |
| 代理商： | K7N401809B-QC20 |
K7N403609B
K7N401809B
128Kx36 & 256Kx18 Pipelined N
t
RAM
TM
- 1 -
Rev 2.0
Nov. 2003
Document Title
128Kx36 & 256Kx18-Bit Pipelined N
t
RAM
TM
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Revision History
Rev. No.
0.0
0.1
0.2
1.0
2.0
Remark
Preliminary
Preliminary
Preliminary
Final
Final
History
1. Initial document.
1. Changed DC parameters
Icc ; from 470mA to 400mA at -25,
from 440mA to 360mA at -22,
from 400mA to 330mA at -20,
from 370mA to 310mA at -18,
I
SB
; from 180mA to 160mA at -25,
from 170mA to 155mA at -22,
from 160mA to 150mA at -20,
from 150mA to 140mA at -18,
I
SB1
; from 100mA to 80mA
1. Add x32 org. and industrial temperature
1. Final spec release
2. Changed Pin Capacitance
- Cin ; from 5pF to 4pF
- Cout ; from 7pF to 6pF
1. Remove x32 organization.
2. Remove -25/-22 speed bin
Draft Date
May. 15. 2001
June. 12. 2001
Aug. 11. 2001
Nov. 15. 2001
Nov. 17. 2003
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