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參數資料
| 型號： | K7P403622B-HC25 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
| 中文描述： | 128K × 36至 |
| 文件頁數： | 1/13頁 |
| 文件大小： | 280K |
| 代理商： | K7P403622B-HC25 |
Rev 1.2
Jul. 2003
- 1 -
K7P401822B
128Kx36 & 256Kx18 SRAM
K7P403622B
Document Title
128Kx36 & 256Kx18 Synchronous Pipelined SRAM
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.
Revision History
Rev. No.
Rev. 0.0
Rev. 0.1
Rev. 0.2
Rev. 1.0
Rev. 1.1
Rev. 1.2
Remark
Preliminary
Preliminary
Preliminary
Final
Final
Final
History
- Initial Document.
- Update Pin Discription. (M2=VDDQ -> M2=VDD)
- Add AC characteristics. (250Mhz, 166Mhz)
- Update DC CHARACTERISTICS
x36 : I
DD25
: TBD -> 370, I
DD20
-> 340, I
DD16
-> 320.
x18 : I
DD25
: TBD -> 360, I
DD20
-> 330, I
DD16
-> 310.
- Final Version
- Add single ended or differential LVTTL clock Inputs on clock comment.
- Change AC Characteristics
tKHQV : 25 - 2.5ns, 20 - 2.7ns
Draft Date
May. 2002
Oct. 2002
Jan. 2003
Jun. 2003
Jul. 2003
Jul. 2003
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