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參數(shù)資料
| 型號： | K7Q161882A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx36 & 1Mx18 QDR b2 SRAM |
| 中文描述： | 512Kx36 |
| 文件頁數(shù)： | 1/17頁 |
| 文件大小： | 503K |
| 代理商： | K7Q161882A |
512Kx36 & 1Mx18 QDR
TM
b2 SRAM
- 1 -
Rev 1.0
July 2002
K7Q163682A
K7Q161882A
Document Title
512Kx36-bit, 1Mx18-bit QDR
TM
SRAM
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Revision History
Rev. No.
0.0
0.1
0.2
1.0
Remark
Advance
Advance
Preliminary
Final
History
1. Initial document.
1. Icc, Isb addition
2. 1.8V Vddq addition
3. Speed bin change
1. Changed Pin configuration at x36 organization.
- 9F ; from Q14 to D14 .
- 10F ; from D14 to Q14 .
2. Reserved pin for high density name change from NC to Vss/SA
1. Final SPEC release
2. Modify thermal resistance
Draft Date
May, 22 2001
Sep,03 2001
Nov. 20. 2001
July, 03. 2002
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