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參數(shù)資料
型號(hào): K9F1G08U0M-VIB0
廠(chǎng)商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Industrial Mid-Range Soldering Iron; Power Rating:60W; Tip Temperature:850 F; Features:Incls.: One 67D 1/4" Dia., 3-3/8" L Long-Tapered Diamond-Style Paragon Soldering Tip RoHS Compliant: Yes
中文描述: 1Gb的NAND閃存千兆1.8V的勘誤表
文件頁(yè)數(shù): 1/38頁(yè)
文件大小: 713K
代理商: K9F1G08U0M-VIB0
San 16 Banwol-Ri
Taean-Eup Hwasung- City
Kyungki Do, Korea
Tel.) 82 - 31 - 208 - 6463
Fax.) 82 - 31 -208 - 6799
March. 2003
ELECTRONICS
1
1
1
Gb
1.8V NAND Flash Errata
Description
: Some of AC characteristics are not meeting the specification.
> AC characteristics : Refer to Table
Affected Products
: K9F1G08Q0M-YCB0/YIB0, K9F1G16Q0M-YCB0/YIB0
K9K2G08Q0M-YCB0/YIB0, K9K2G16Q0M-YCB0/YIB0
Improvement schedule
: The components targeted to meet the specification
is scheduled to be available by workweek 25 along
with the final specification values.
Sincerely,
chwoosun@sec.samsung.com
Product Planning & Application Eng.
Memory Division
Samsung Electronics Co.
Table
Parameters
Specification
Relaxed Condition
tWC
45
80
tWH
15
20
tWP
25
60
tRC
50
80
tREH
15
20
tRP
25
60
tREA
30
60
UNIT : ns
Workaround
: Relax the relevant timing parameters according to the table.
tCEA
45
75
相關(guān)PDF資料
PDF描述
K9F1G08U0M-YIB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G16Q0M-PCB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G16Q0M-YIB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G16U0M-PCB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G16U0M-PIB0 1Gb Gb 1.8V NAND Flash Errata
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1G08U0M-YCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-YIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08UOC-PCB000 制造商:Samsung Semiconductor 功能描述:1GB SLC NORMAL X8 FBGA - Trays
K9F1G16D0M 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9F1G16Q0M 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
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