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參數資料
| 型號： | K9F2808Q0C-HCB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 8 Bit NAND Flash Memory |
| 中文描述： | 1,600 × 8位NAND閃存 |
| 文件頁數： | 1/31頁 |
| 文件大小： | 774K |
| 代理商： | K9F2808Q0C-HCB0 |
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FLASH MEMORY
1
K9F2808U0C
Document Title
16M x 8 Bit NAND Flash Memory
Revision History
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
Revision No.
0.0
1.0
2.0
2.1
2.2
2.3
2.4
2.5
2.6
Remark
Advance
Advance
Preliminary
History
Initial issue.
TBGA PKG Dimension Change
48-Ball, 6.0mm x 8.5mm --> 63-Ball, 9.0mm x 11.0mm
1.A3 Pin assignment of TBGA Package is changed.(Page 4)
(before) NC --> (after) Vss
2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 32)
3. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 33)
The min. Vcc value 1.8V devices is changed.
K9F28XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V
Pb-free Package is added.
K9F2808U0C-FCB0,FIB0
K9F2808Q0C-HCB0,HIB0
K9F2816U0C-HCB0,HIB0
K9F2816U0C-PCB0,PIB0
K9F2816Q0C-HCB0,HIB0
K9F2808U0C-HCB0,HIB0
K9F2808U0C-PCB0,PIB0
Some AC parameters are changed(K9F28XXQ0C).
tWC tWH tWP tRC tREH tRP tREA tCEA
Before 45 15 25 50 15 25 30 45
After 60 20 40 60 20 40 40 55
1. New definition of the number of invalid blocks is added.
(Minimum 502 valid blocks are guaranteed for each contiguous 64Mb
memory space)
2.
Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
1. K9F2808U(Q)0C-DC(I)B0,K9F2816U(Q)0C-DC(I)B0 is deleted.
2. tWC is changed.
45ns(Before) ---> 50ns(After)
3. Minimum valid block number is changed.
1004(Before) --> 1009(After)
1. Minimum valid block number is changed.
1009(Before) --> 1004(After)
Draft Date
Apr. 15th 2002
Sep. 5th 2002
Dec.10th 2002
Mar. 6th 2003
Mar. 13rd 2003
Mar. 26th 2003
May. 24th 2003
Oct. 10th 2003
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
相關PDF資料 |
PDF描述 |
|---|---|
| K9F2808U0C-F | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-FCB0 | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-FIB0 | 16M x 8 Bit NAND Flash Memory |
| K9F2808Q0C-HIB0 | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-HCB0 | 16M x 8 Bit NAND Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| K9F2808Q0C-HIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0A- | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0A-YCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
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