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參數(shù)資料
| 型號(hào)： | K9F2808U0B-DIB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 8 Bit NAND Flash Memory |
| 中文描述： | 1,600 × 8位NAND閃存 |
| 文件頁數(shù)： | 1/29頁 |
| 文件大小： | 304K |
| 代理商： | K9F2808U0B-DIB0 |
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FLASH MEMORY
1
K9F2808U0B-YCB0,YIB0
K9F2808U0B-DCB0,DIB0
K9F2808Q0B-DCB0,DIB0
K9F2808U0B-VCB0,VIB0
Document Title
16M x 8 Bit NAND Flash Memory
Revision History
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
Revision No.
0.0
0.1
0.2
0.3
Remark
Advance
K9F2808Q0B
: Preliminary
History
Initial issue.
K9F2808U0B(3.3V device)’ s qualification is finished
K9F2808Q0B (1.8V device)
- Changed typical read operation current (Icc1) from 8mA to 5mA
- Changed typical program operation current (Icc2) from 8mA to 5mA
- Changed typical erase operation current (Icc3) from 8mA to 5mA
- Changed typical program time(tPROG) from 200us to 300us
- Changed ALE to RE Delay (ID read, tAR1) from 100ns to 20ns
- Changed CLE hold time(tCLH) from 10ns to 15ns
- Changed CE hold time(tCH) from 10ns to 15ns
- Changed ALE hold time(tALH) from 10ns to 15ns
- Changed Data hold time(tDH) from 10ns to 15ns
- Changed CE Access time(tCEA) from 45ns to 60ns
- Changed Read cycle time(tRC) from 50ns to 70ns
- Changed Write Cycle time(tWC) from 50ns to 70ns
- Changed RE Access time(tREA) from 35ns to 40ns
- Changed RE High Hold time(tREH) from 15ns to 20ns
- Changed WE High Hold time(tWH) from 15ns to 20ns
1. Device Code is changed
- TBGA package information : ’ B’ --> ’ D’
ex) K9F2808Q0B-BCB0 ,BIB0 --> K9F2808Q0B-DCB0,DIB0
K9F2808U0B-BCB0 ,BIB0 --> K9F2808Q0B-DCB0,DIB0
2. V
IH
,V
IL
of K9F2808Q0B(1.8 device) is changed
(before revision)
(after revision)
Input High Voltage
V
IH
I/O pins
VccQ-0.4
VccQ
Except I/O pins
V
CC
-0.4
-
VCC
Input Low Voltage,
All inputs
V
IL
-
0
-
0.4
Input High Voltage
V
IH
I/O pins
VccQ-0.4
VccQ
+0.3
Except I/O pins
V
CC
-0.4
-
VCC
+0.3
Input Low Voltage,
All inputs
V
IL
-
-0.3
-
0.4
Draft Date
May 28’ th 2001
Jun. 30th 2001
Jul. 30th 2001
Aug. 23th 2001
Note : For more detailed features and specifications including FAQ, please refer to Samsung’ s Flash web site.
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F2808U0M-YIB0 | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0M-YCB0 | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0B-YCB0 | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-DIB0 | 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory |
| K9F2808U0B-D | 16M x 8 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F2808U0B-V | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0B-VCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0B-VIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0B-Y | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0B-YCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
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