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參數資料
| 型號： | K9F3208W0A- |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:128; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle |
| 中文描述： | 4米× 8位NAND閃存 |
| 文件頁數： | 1/27頁 |
| 文件大小： | 558K |
| 代理商： | K9F3208W0A- |
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K9F3208W0A-TCB0, K9F3208W0A-TIB0
FLASH MEMORY
1
Document Title
4M x 8 Bit NAND Flash Memory
Revision History
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
Revision No.
0.0
0.1
0.2
0.3
0.4
0.5
Remark
Advance
History
Initial issue.
Data Sheet, 1999
1. Added CE don’t care mode during the data-loading and reading
1. Revised real-time map-out algorithm(refer to technical notes)
2. Removed erase suspend/resume mode
1. Changed device name
- KM29W32000AT -> K9F3208W0A-TCB0
- KM29W32000AIT -> K9F3208W0A-TIB0
1. Changed invalid block(s) marking method prior to shipping
- The invalid block(s) information is written the 1st or 2nd page of the
invalid block(s) with 00h data
--->The invalid block(s) status is defined by the 6th byte in the spare
area. Samsung makes sure that either the 1st or 2nd page of every
invalid block has
non-FFh
data at the column address of 517.
2. Changed SE pin description
- SE is recommended to coupled to GND or Vcc and should not be
toggled during reading or programming.
1.Powerup sequence is added
: Recovery time of minimum 1
μ
s is required before internal circuit gets
ready for any command sequences
2. AC parameter tCLR(CLE to RE Delay, min 50ns) is added.
3. AC parameter tAR1 value : 150ns --> 20ns
4. #40 Pin Name : nSE --> GND
V
CC
WP
High
≈
≈
~ 2.5V
~ 2.5V
≈
WE
1
μ
Draft Date
April 10th 1998
April 10th 1999
July 23th 1999
Sep. 15th 1999
July 17th 2000
July 23th 2001
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html.
相關PDF資料 |
PDF描述 |
|---|---|
| K9F3208W0A-TCB0 | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| K9F3208W0A-TIB0 | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| K9F4008W0A | 512K x 8 bit NAND Flash Memory |
| K9F4008W0A- | 512K x 8 bit NAND Flash Memory |
| K9F4008W0A-TCB0 | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
相關代理商/技術參數 |
參數描述 |
|---|---|
| K9F3208W0A-TCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 8 Bit NAND Flash Memory |
| K9F3208W0A-TIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 8 Bit NAND Flash Memory |
| K9F4008W0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory |
| K9F4008W0A- | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory |
| K9F4008W0A-TCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory |
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