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參數資料
| 型號： | K9T1G08U0M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128M x 8 Bits NAND Flash Memory |
| 中文描述： | 128M的x 8位NAND閃存 |
| 文件頁數： | 1/38頁 |
| 文件大小： | 888K |
| 代理商： | K9T1G08U0M |
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FLASH MEMORY
1
K9T1G08U0M
Preliminary
Document Title
128M x 8 Bits NAND Flash Memory
Revision History
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
Revision No.
0.0
0.1
0.2
0.3
0.4
0.5
Remark
Advanced
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
History
Initial issue.
tR is changed. [Old : 12
μ
s(Max.), New :15
μ
s(Max.)]
CE must be held low during tR added.
1. Add the Protrusion/Burr value in WSOP1
PKG Diagram
.
1. PKG(TSOP1, WSOP1) Dimension Change
1. Technical note is changed
2.Note1 of Program/Erase characteristics is added
Draft Date
Aug. 7th 2003
Oct. 20th 2003
Mar. 9th 2004
Apr. 24th 2004
May. 24th 2004
Oct. 25th 2004
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/
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相關代理商/技術參數 |
參數描述 |
|---|---|
| K9T1G08U0M-YIB0000 | 制造商:Samsung Semiconductor 功能描述:1GB SLC SINGLE (S/B X8 TSOP1 - Trays |
| K9VGMV | 制造商:Micro-Star International 功能描述:- Bulk |
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| K9W4G08U1M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
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