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參數(shù)資料
型號(hào)： K9XXG08UXM-Y
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
中文描述： 256M × 8位/ 128M的× 16位NAND閃存
文件頁數(shù)： 1/39頁
文件大小： 680K
代理商： K9XXG08UXM-Y
FLASH MEMORY
1
K9W4G08U1M
K9K2G08U0M
K9W4G16U1M
K9K2G16Q0M
K9K2G16U0M
K9K2G08Q0M
Document Title
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near your office.
Revision No
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Remark
Advance
History
1. Initial issue
1. I
OL
(R/B) of 1.8V device is changed.
-min. Value: 7mA -->3mA
-typ. Value: 8mA -->4mA
1. 5th cycle of ID is changed
: 40h --> 44h
1. Add WSOP Package Dimensions.
1. Add two-K9K2GXXU0M-YCB0/YIB0 Stacked Package
1. Min valid block of K9W4GXXU1M-YCB0/YIB0 is changed .
- min. 4016 --> 4036
1.
Each K9K2GXXX0M chip in the K9W4GXXU1M has Maximum 30
invalid blocks.
2. K9W4GXXU1M’s ID is changed
(Before)
(After)
1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36)
2. Add the data protection Vcc guidence for 1.8V device - below about 1.1V.
(Page 37)
The min. Vcc value 1.8V devices is changed.
K9K2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V
Device
2nd Cycle
3rd cycle
4th Cycle
5th Cycle
K9W4G08U1M
DCh
C3
15h
4Ch
K9W4G16U1M
CCh
C3
55h
4Ch
Device
2nd Cycle
3rd cycle
4th Cycle
5th Cycle
K9W4G08U1M
DAh
C1
15h
44h
K9W4G16U1M
CAh
C1
55h
44h
Draft Date
Aug. 30.2001
Nov. 5.2001
Jan. 23. 2002
May.29.2002
Aug.13.2002
Aug. 22.2002
Nov. 07.2002
Nov. 22.2002
Mar. 6.2003
相關(guān)PDF資料
PDF描述
K9XXG16UXM-E SSR H/S IO 230V 20A 4-32VDC
K9XXG16UXM-K SSR H/S PS 230V 50A 4-20MA E
K9XXG16UXM-P Multi-function, zero cross and proportional output SSR with integrated heat sink. 2-wire Modbus input, 230VAC, 50A single phase output.
K9XXG16UXM-Y Multi-function, zero cross and proportional output SSR with integrated heat sink. 2-wire Modbus input, 230VAC, 50A single phase output, bult-in current measurement.
K9K2G08U0M-V 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9XXG08XXA-XCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Preliminary FLASH MEMORY
K9XXG08XXA-XIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Preliminary FLASH MEMORY
K9XXG16UXM-E 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9XXG16UXM-K 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9XXG16UXM-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
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