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參數資料
| 型號： | KBPC1002GW |
| 廠商： | Won-Top Electronics Co., Ltd. |
| 英文描述： | 10A GLASS PASSIVATED BRIDGE RECTIFIER |
| 中文描述： | 10A條玻璃鈍化整流橋 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 48K |
| 代理商： | KBPC1002GW |
KBPC1000G/W – KBPC1010G/W
1 of 3 2002 Won-Top Electronics
KBPC1000G/W – KBPC1010G/W
10A GLASS PASSIVATED BRIDGE RECTIFIER
Features
!
Glass Passivated Die Construction A A
!
Low Reverse Leakage Current C C
!
Low Power Loss, High Efficiency G G
!
Electrically Isolated Epoxy Case for ~ ~ +
Maximum Heat Dissipation D + C C
!
Case to Terminal Isolation Voltage 2500V - ~ - ~ D
H H
Mechanical Data
E E
!
Case: Epoxy Case with Heat Sink Internally B B
Mounted in the Bridge Encapsulation
Metal Heat Sink
!
Terminals: Plated Leads Solderable per
KBPC-G
KBPC-GW
MIL-STD-202, Method 208
!
Polarity: Symbols Marked on Case
!
Mounting: Through Hole for #10 Screw
!
Weight:
KBPC-G
24 grams (approx.)
KBPC-GW
21 grams (approx.)
!
Marking: Type Number
"W” Suffix Designates Wire Leads
No Suffix Designates Faston Terminals
*All Models are Available on B(Height)=7.9mm Max. Epoxy Case
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
KBPC
1000G/W
KBPC
1001G/W
KBPC
1002G/W
KBPC
1004G/W
KBPC
1006G/W
KBPC
1008G/W
KBPC
1010G/W
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
V
R(RMS)
35
70
140
280
420
560
700
V
Average Rectified Output Current @T
A
= 50°C
I
O
10
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed
on rated load (JEDEC Method)
I
FSM
200
A
Forward Voltage (per element) @I
F
= 5.0A
V
FM
1.1
V
Peak Reverse Current @T
C
= 25°C
At Rated DC Blocking Voltage @T
C
= 125°C
I
RM
5.0
500
μA
Typical Junction Capacitance (Note 1)
C
j
300
pF
Typical Thermal Resistance (Note 2)
R
JC
5.3
K/W
RMS Isolation Voltage from Case to Lead
V
ISO
2500
V
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case per element mounted on heatsink.
W TE
POWER SEMICONDUCTORS
KBPC-G
Min
28.40
10.97
15.70
17.50
22.86
Hole for #10 screw, 5.08 Nominal
6.35 Typical
All Dimension in mm
KBPC-GW
Min
28.40
10.97
17.10
10.90
30.50
Dim
A
B
C
D
E
G
H
Max
28.70
11.23
16.70
18.50
25.40
Max
28.70
11.23
19.10
11.90
—
0.97
1.07
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