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參數資料
| 型號： | KBPC1506GS |
| 廠商： | Won-Top Electronics Co., Ltd. |
| 英文描述： | Quad Advanced LinCMOS(TM) Rail-To-Rail Operational Amplifier 14-PDIP |
| 中文描述： | 15,25,35鈍化的在玻璃生產線橋式整流器 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 49K |
| 代理商： | KBPC1506GS |
KBPC15, 25, 35GS SERIES
1 of 3 2002 Won-Top Electronics
KBPC15, 25, 35GS SERIES
15, 25, 35A GLASS PASSIVATED IN-LINE BRIDGE RECTIFIER
Features
!
Glass Passivated Die Construction
!
Low Forward Voltage Drop
!
High Current Capability A
!
High Reliability
!
High Surge Current Capability
!
Ideal for Printed Circuit Boards
!
Designed for Saving Mounting Space
- ~ ~ +
Mechanical Data
C
!
Case: Epoxy Case with Heat Sink Internally D
Mounted in the Bridge Encapsulation
!
Terminals: Plated Leads Solderable per
E E
MIL-STD-202, Method 208
!
Polarity: As Marked on Body
METAL HEATSINK
!
Weight: 30 grams (approx.) G B
!
Mounting Position: Any
!
Marking: Type Number
H
D
19.10
E
5.10
G
1.20 Typical
H
3.05
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristics
Symbol
-00GS -01GS -02GS -04GS -06GS -08GS -10GS
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
V
R(RMS)
35
70
140
280
420
560
700
V
Average Rectified Output Current
@T
C
= 55°C
KBPC15
KBPC25
KBPC35
I
O
15
25
35
A
Non-Repetitive Peak Forward Surge Current,
8.3ms Single Half-sine-wave Superimposed
on Rated Load (JEDEC Method)
KBPC15
KBPC25
KBPC35
I
FSM
300
300
400
A
Forward Voltage Drop
(per element)
KBPC15 @I
F
= 7.5A
KBPC25 @I
F
= 12.5A
KBPC35 @I
F
= 17.5A
V
FM
1.1
V
Peak Reverse Current at @T
= 25°C
Rated DC Blocking Voltage (per element) @T
C
= 125°C
I
R
5.0
500
μA
I
2
t Rating for Fusing (t < 8.3ms) (Note 1)
KBPC15
KBPC25
KBPC35
I
2
t
374
374
664
A
2
s
Typical Thermal Resistance (per element) (Note 2)
R
JC
2.0
K/W
RMS Isolation Voltage from Case to Lead
V
ISO
2500
V
Operating and Storage Temperature Range
T
j,
T
STG
-65 to +150
°C
Note: 1. Non-repetitive for t > 1ms and < 8.3ms.
2. Thermal resistance junction to case per element mounted on 220 x 220 x 50mm thick AL plate.
W TE
POWER SEMICONDUCTORS
KBPC-S
Min
28.40
10.97
13.90
Dim
A
B
C
Max
28.70
11.23
—
—
—
3.60
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