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參數資料
| 型號： | KBPC808G |
| 廠商： | 濟南固锝電子器件有限公司 |
| 英文描述： | SINGLE PHASE 8.0 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS |
| 中文描述： | 單相8.0安培。玻璃鈍化橋式整流器 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 34K |
| 代理商： | KBPC808G |
KBPC800G – KBPC810G
1 of 3 2002 Won-Top Electronics
KBPC800G – KBPC810G
8.0A GLASS PASSIVATED BRIDGE RECTIFIER
Features
!
Glass Passivated Die Construction
!
High Current Capability
!
High Case Dielectric Strength H
!
High Surge Current Capability J
!
Ideal for Printed Circuit Board Application G + ~
!
Plastic Material has Underwriters Laboratory
Flammability Classification 94V-O E A
~ -
E
Mechanical Data
!
Case: Molded Plastic D C
!
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
!
Polarity: Marked on Body B
!
Weight: 5.4 grams (approx.) A
!
Mounting Position: Through Hole for #6 Screw
!
Mounting Torque: 5.0 Inch-pounds Maximum
!
Marking: Type Number
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
KBPC
800G
KPBC
801G
KBPC
802G
KBPC
804G
KBPC
806G
KBPC
808G
KBPC
810G
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
V
R(RMS)
35
70
140
280
420
560
700
V
Average Rectified Output Current (Note 1) @T
A
= 50°C
I
O
8.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
160
A
Forward Voltage (per element) @I
F
= 4.0A
V
FM
1.1
V
Peak Reverse Current @T
= 25°C
At Rated DC Blocking Voltage @T
C
= 125°C
I
R
5.0
500
μA
I
2
t Rating for Fusing (t<8.3ms) (Note 2)
I
2
t
160
A
2
s
Typical Junction Capacitance (Note 3)
C
j
200
pF
Typical Thermal Resistance (Note 4)
R
JC
6.0
K/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Note: 1. Mounted on 8.6" sq. x 0.24" thick Al. plate.
2. Non-repetitive, for t > 1ms and < 8.3ms.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
4. Thermal resistance junction to case per element.
W TE
POWER SEMICONDUCTORS
KBPC-8
Min
18.54
6.35
19.00
1.27 Typical
5.33
Hole for #6 screw
3.60
12.20
2.38 x 45°C Typical
All Dimensions in mm
Dim
A
B
C
D
E
Max
19.56
7.60
—
7.37
G
4.00
13.20
H
J
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