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參數資料
| 型號： | KBU1010G |
| 廠商： | 濟南固锝電子器件有限公司 |
| 英文描述： | SINGLE PHASE 10 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS |
| 中文描述： | 單相10安培。玻璃鈍化橋式整流器 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 43K |
| 代理商： | KBU1010G |
KBU1000G – KBU1010G
1 of 3 2002 Won-Top Electronics
KBU1000G – KBU1010G
10A GLASS PASSIVATED BRIDGE RECTIFIER
Features
!
Glass Passivated Die Construction A
!
Low Forward Voltage Drop B C
!
High Current Capability D
!
High Reliability
!
High Surge Current Capability K L
!
Ideal for Printed Circuit Boards -
~ ~ +
E
J G
Mechanical Data
!
Case: Molded Plastic H
!
Terminals: Plated Leads Solderable per M
MIL-STD-202, Method 208
!
Polarity: As Marked on Body
!
Weight: 8.0 grams (approx.)
!
Mounting Position: Any
!
Marking: Type Number
N
P
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
KBU
1000G
KBU
1001G
KBU
1002G
KBU
1004G
KBU
1006G
KBU
1008G
KBU
1010G
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
V
R(RMS)
35
70
140
280
420
560
700
V
Average Rectified Output Current @T
A
= 50°C
I
O
10
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I
FSM
200
A
Forward Voltage (per element) @I
F
= 5.0A
V
FM
1.1
V
Peak Reverse Current @T
= 25°C
At Rated DC Blocking Voltage @T
A
= 125°C
I
R
5.0
500
μA
Operating and Storage Temperature Range
T
j,
T
STG
-55 to +150
°C
W TE
POWER SEMICONDUCTORS
KBU
Min
22.70
3.80
4.20
1.70
10.30
4.50
4.60
25.40
—
16.80
6.60
4.70
1.20
Dim
A
B
C
D
E
G
H
J
K
L
M
N
P
All Dimensions in mm
Max
23.70
4.10
4.70
2.20
11.30
6.80
5.60
—
19.30
17.80
7.10
5.20
1.30
相關PDF資料 |
PDF描述 |
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| KBU10 | TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER |
| KBU10A | TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER |
| KBU10B | TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER |
| KBU10D | TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER |
| KBU10G | TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER |
相關代理商/技術參數 |
參數描述 |
|---|---|
| KBU1010-G | 功能描述:橋式整流器 KBU CELL 10A 1000V Rect. Bridge Diode RoHS:否 制造商:Vishay 產品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| KBU10A | 制造商:CHONGQING 制造商全稱:CHONGQING 功能描述:SINGLE-PHASE SILICON BRIDGE RECTIFIER |
| KBU10A _B0 _10001 | 制造商:PanJit Touch Screens 功能描述: |
| KBU10A_07 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SILICON BRIDGE RECTIFIERS |
| KBU10B | 制造商:DCCOM 制造商全稱:Dc Components 功能描述:TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER |
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