- 您現在的位置：買賣IC網 > PDF目錄354082 > KBU8J SINGLE-PHASE SILICON BRIDGE PDF資料下載
參數資料
| 型號： | KBU8J |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SINGLE-PHASE SILICON BRIDGE |
| 中文描述： | 單相硅橋 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 83K |
| 代理商： | KBU8J |
4/98
KBU8A THRU KBU8M
SINGLE-PHASE BRIDGE RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 8.0 Amperes
FEATURES
Plastic material used carries Underwriters Laboratory
Flammability Classification 94V-0
This series is UL listed under Recognized Component Index,
file number E54214
High case dielectric strength
of 1500 VRMS
Ideal for printed circuit boards
High forward surge current capability
High temperature soldering guaranteed:
250°C/10 seconds, 0.375" (9.5mm) lead length,
5lbs. (2.3 kg) tension
MECHANICAL DATA
Case: Molded plastic body
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Mounting Position: Any (NOTE 1)
Mounting Torque: 5 in.-lb. max.
Weight: 0.3 ounce, 8.0 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
KBU
SYMBOLS
8A
8B
8D
8G
8J
8K
8M
UNITS
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
Volts
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
Volts
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
Volts
Maximum average forward rectified TC=100°C (NOTE 1, 3)
8.0
output current at
TA=45°C (NOTE 2)
I(AV)
6.0
Amps
Peak forward surge current single half sine-wave
superimposed on rated load (JEDEC Method) TJ=150°C
IFSM
300.0
Amps
Maximum instantaneous forward voltage drop
per leg at 8.0A
VF
1.0
Volts
Maximum DC reverse current at rated
TA=25°C
10.0
A
DC blocking voltage per leg
TA=125°C
IR
1.0
mA
Typical thermal resistance per leg (NOTE 2)
R
ΘJA
18.0
(NOTE 3)
R
ΘJC
3.0
°C/W
Operating junction and storage temperature range
TJ, TSTG
-50 to +150
°C
NOTES:
(1) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw
(2) Units mounted in free air, no heatsink, P.C.B. at 0.375" (9.5mm) lead length with 0.5 x 0.5” (12 x 12mm) copper pads
(3) Units mounted on a 3.0 x 3.0” x 0.11" thick (7.5 x 7.5 x 0.3cm) Al. Plate heatsink
0.160 (4.1)
0.065 (1.7)
0.185 (4.7)
0.895 (22.7)
0.935 (23.7)
0.140 (3.6)
0.165 (4.2)
0.085 (2.2)
0.240 (6.09)
0.200 (5.08)
0.220 (5.6)
0.180 (4.6)
0.075 (1.9) R. TYP.
(2 PLACES)
45
o
0.205 (5.2)
0.185 (4.7)
0.052 (1.3)
0.048 (1.2)
0.280 (7.1)
0.260 (6.6)
DIA.
0.760
(19.3)
MAX.
0.700
(17.8)
0.660
(16.8)
1.0
(25.4)
MIN.
0.455 (11.3)
0.405 (10.3)
Case Style KBU
Dimensions in inches and (millimeters)
相關PDF資料 |
PDF描述 |
|---|---|
| KBU8G | SINGLE-PHASE SILICON BRIDGE |
| KBU8D | SINGLE-PHASE SILICON BRIDGE |
| KBU8A | SINGLE-PHASE SILICON BRIDGE |
| KBU6J | SINGLE-PHASE SILICON BRIDGE |
| KBU4M | SINGLE-PHASE SILICON BRIDGE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| KBU8J _B0 _10001 | 制造商:PanJit Touch Screens 功能描述: |
| KBU8J_Q | 功能描述:橋式整流器 8A Bridge Rectifier RoHS:否 制造商:Vishay 產品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| KBU8J-E4/1 | 制造商:Vishay Semiconductors 功能描述:Diode |
| KBU8J-E4/51 | 功能描述:橋式整流器 8.0 Amp 600 Volt RoHS:否 制造商:Vishay 產品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| KBU8J-E4/51 | 制造商:Vishay Semiconductors 功能描述:BRIDGE RECTIFIER 1PH 8A 600V THD 制造商:Vishay Semiconductors 功能描述:BRIDGE RECTIFIER, 1PH, 8A, 600V THD |
發布緊急采購，3分鐘左右您將得到回復。