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參數(shù)資料
| 型號(hào)： | KD100GB80 |
| 廠商： | Sanrex Corporation |
| 英文描述： | DIODE MODULE |
| 中文描述： | 二極管模塊 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 450K |
| 代理商： | KD100GB80 |
75
DD(KD)100GB40/80
DIODE MODULE
Symbol
Item
Ratings
DD100GB40
400
480
Unit
V
RRM
V
RSM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
DD100GB80
800
960
V
V
Unit
a
Symbol
I
F AV
I
F (RMS)
I
FSM
I
2
t
Tj
Tstg
V
ISO
Item
Average Forward Current
R.M.S. Forward Current
Surge Forward Current
I
2
t
Junction Temperature
Storage Temperature
Conditions
Ratings
100
155
1800
/
2000
16500
40
40
2500
4.7
2.7
170
Unit
A
A
A
A
2
S
Single phase, half wave, 180 conduction, Tc
Single phase, half wave, 180 conduction, Tc
12
cycle, 50
/
60H
Z
, peak value, non-repetitive
Value for one cycle of surge current
115
115
150
125
Isolation Breakdown Voltage R.M.S.
Mounting
Torque
A.C.1minute
Recommended Value 2.5
Recommended Value 1.5
V
Mounting
M6
Terminal M5
Mass
3.9
2.5
25
15
40
25
48)
28)
N m
f
B
g
Electrical Characteristics
Symbol
I
RRM
Repetitive Peak Reverse Current, max.
V
FM
Forward Voltage Drop, max.
Rth j-c
Thermal Impedance, max.
Item
Conditions
at V
DRM
, single phase, half wave. Tj
Foward current 320A Tj 25
Junction to case
150
Ratings
30
1.25
0.30
Unit
mA
V
/
W
Inst. measurement
Power Diode Module
DD100GB
series are designed for various rectifier circuits.
DD100GB
has two diode chips connected in series and the mounting base is elctrically
isolated from elements for simple heatsink construction. Wide voltage rating up to, 800V
is avaiable for various input voltage.
Isolated mounting base
Two elements in a package for simple (single and three phase) bridge
connections
Highly reliable glass passivated chips
High surge current capability
Applications
Various rectifiers, Battery chargers, DC motor drives
UL;E76102 M
Maximum Ratings
Tj
25
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