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參數資料
| 型號： | KD30GB40 |
| 廠商： | Sanrex Corporation |
| 英文描述： | DIODE MODULE |
| 中文描述： | 二極管模塊 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 104K |
| 代理商： | KD30GB40 |
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
DD(KD)30GB40/80
DIODE MODULE
Electrical Characteristics
Symbol
I
RRM
Repetitive Peak Reverse Current, max.
V
FM
Forward Voltage Drop, max.
Rth j-c
Thermal Impedance, max.
Symbol
Item
Ratings
DD30GB40
400
480
DD30GB80
800
960
Unit
V
RRM
V
RSM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
V
V
Symbol
I
F AV
I
F RMS
I
FSM
I
2
t
Tj
Tstg
V
ISO
Item
Average Forward Current
R.M.S. Forward Current
Surge Forward Current
I
2
t
J unction Temperature
Storage Temperature
Isolation Breakdown Voltage R.M.S.
Conditions
Ratings
30
47
550
/
600
1500
40 to
40 to
2500
4.7
2.7
170
Unit
A
A
A
A
2
S
Single phase, half wave, 180 conduction, Tc
Single phase, half wave, 180 conduction, Tc
12
cycle, 50
/
60H
Z
, peak value, non-repetitive
Value for one cycle of surge current
118
118
150
125
A.C.1minute
Recommended Value 2.5-3.9
Recommended Value 1.5-2.5
25-40
15-25
V
N m
f
B
48
28
Mass
g
Item
Conditions
at V
DRM
, single phase, half wave. Tj
Foward current 90A Tj 25
J unction to case
150
Ratings
10
1.40
0.80
Unit
mA
V
/
W
Inst. measurement
93.5MAX
80
2
3
1
2
16.5
23
3
~
+
–
2
1
23
3M5
2- 6.5
Unit
a
Mounting
Torque
Mounting
M6
Terminal M5
Power Diode Module
DD30GB
series are designed for various rectifier circuits.
DD30GB
has two diode chips connected in series and the mounting base is elctrically
isolated from elements for simple heatsink construction. Wide voltage rating up to, 800V
is avaiable for various input voltage.
Isolated mounting base
Two elements in a package for simple (single and three phase) bridge
connections
Highly reliable glass passivated chips
High surge current capability
Applications
Various rectifiers, Battery chargers, DC motor drives
UL;E76102 M
Maximum Ratings
Tj
25
unless otherwise specified
SanRex
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