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參數資料
| 型號： | KD60HB160 |
| 廠商： | Sanrex Corporation |
| 英文描述： | DIODE MODULE |
| 中文描述： | 二極管模塊 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 97K |
| 代理商： | KD60HB160 |
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
DD(KD)60HB120/160
DIODE MODULE
Symbol
Item
Ratings
DD60HB120
1200
1350
Unit
V
RRM
V
RSM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
DD60HB160
1600
1700
V
V
Symbol
I
F AV
I
F (RMS)
I
FSM
I
2
t
Tj
Tstg
V
ISO
Item
Average Forward Current
R.M.S. Forward Current
Surge Forward Current
I
2
t
J unction Temperature
Storage Temperature
Isolation Breakdown Voltage R.M.S.
Conditions
Ratings
Unit
A
A
A
A
2
S
Single phase, half wave, 180 conduction, Tc
Single phase, half wave, 180 conduction, Tc
12
cycle, 50
/
60H
Z
, peak value, non-repetitive
Value for one cycle of surge current
111
111
60
95
1100
/
1200
6000
40 to
40 to
2500
4.7
2.7
170
150
125
Mounting
Torque
A.C.1minute
Recommended Value 2.5-3.9
Recommended Value 1.5-2.5
V
Mounting
M6
Terminal M5
Mass
25-40
15-25
48)
28)
N m
f
B
g
93.5MAX
80
2
3
1
2
16.5
23
3
~
+
–
2
1
23
3M5
2- 6.5
Unit
a
Electrical Characteristics
Symbol
I
RRM
Repetitive Peak Reverse Current, max.
V
FM
Forward Voltage Drop, max.
Rth j-c
Thermal Impedance, max.
Item
Conditions
at V
DRM
, single phase, half wave. Tj
Foward current 180A Tj 25
J unction to case
150
Ratings
20
1.35
0.50
Unit
mA
V
/
W
Inst. measurement
Power Diode Module
DD60HB
series are designed for various rectifier circuits.
DD60HB
has two diode chips connected in series and the mounting base is elctrically
isolated from elements for simple heatsink construction. Wide voltage ratage up to,
1,600V is avaiable for various input voltage.
Isolated mounting base
Two elements in a package for simple (single and three phase) bridge
connections
Highly reliable glass passivated chips
High surge current capability
Applications
Various rectifiers, Battery chargers, DC motor drives
UL;E76102 M
Maximum Ratings
Tj
25
unless otherwise specified
SanRex
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