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參數(shù)資料
| 型號(hào)： | KDS114E |
| 廠商： | KEC Holdings |
| 英文描述： | VHF TUNER BAND SWITCH APPLICATIONS |
| 中文描述： | 甚高頻調(diào)諧器波段開關(guān)應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 75K |
| 代理商： | KDS114E |
1999. 6. 7
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDS114E
SILICON EPITAXIAL PLANAR DIODE
Revision No : 0
VHF TUNER BAND SWITCH APPLICATIONS.
FEATURES
Small Package.
Small Total Capacitance : C
T
=1.2pF(Max.).
Low Series Resistance : r
S
=0.5
(Typ.).
MAXIMUM RATING (Ta=25
)
ESC
DIM
A
B
C
D
E
F
MILLIMETERS
1.60 0.10
1.20 0.10
0.80 0.10
0.30 0.05
0.60 0.10
0.13+
C
D
C
B
A
1
2
E
1. ANODE
2. CATHODE
F
+
+
+
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
V
R
30
V
Forward Current
I
F
100
mA
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F
I
F
=2mA
-
-
0.85
V
Reverse Current
I
R
V
R
=15V
-
-
0.1
A
Reverse Voltage
V
R
I
R
=1
A
30
-
-
V
Total Capacitance
C
T
V
R
=6V, f=1MHz
-
0.7
1.2
pF
Series Resistance
r
s
I
F
=2mA, f=100MHz
-
0.5
0.9
Type Name
Marking
D
U
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KDS114 | SILICON EPITAXIAL PLANAR DIODE (VHF TUNER BAND SWITCH APPLICATIONS) |
| KDS115 | SILICON EPITAXIAL TYPE DIODE (VHF TUNER BAND SWITCH APPLICATIONS) |
| KDS120V | SILICON EPITAXIAL TYPE DIODE |
| KDS120 | SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING) |
| KDS121E | SILICON EPITAXIAL PLANAR DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KDS114E_00 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:ESC PACKAGE |
| KDS114E_04 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:SILICON EPITAXIAL PLANAR DIODE |
| KDS114V | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:VSC PACKAGE |
| KDS114WS | 制造商:SEMTECH_ELEC 制造商全稱:SEMTECH ELECTRONICS LTD. 功能描述:SILICON EPITAXIAL PLANAR DIODE |
| KDS115 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:SILICON EPITAXIAL PLANAR DIODE |
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