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參數資料
| 型號： | KDV258 |
| 廠商： | KEC Holdings |
| 英文描述： | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND) |
| 中文描述： | 變容二極管外延硅平面二極管（振蕩器的超高頻/甚高頻波段） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 65K |
| 代理商： | KDV258 |
2001. 6. 11
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDV258
Revision No : 0
VCO FOR UHF/VHF BAND.
FEATURES
High Capacitance Ratio : C
1V
/C
4V
=2.0(Min.)
Low Series Resistance : r
s
=0.45
(Max.)
MAXIMUM RATING (Ta=25
)
USC
DIM
A
MILLIMETERS
2.50 0.1
1.25 0.05
0.90 0.05
0.30+0.06/-0.04
1.70+
MIN 0.17
0.126+
0~0.1
1.0 MAX
+
+
B
C
D
E
F
G
H
I
J
K
L
M
0.15 0.05
0.4 0.05
2 +4/-2
4~6
C
M
M
I
C
J
G
D
2
1
B
1. ANODE
2. CATHODE
E
K
A
F
H
L
+
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
Type Name
Marking
6
U
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
V
R
15
V
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Voltage
V
R
I
R
=1
A
15
-
-
V
Reverse Current
I
R
V
R
=10V
-
-
10
nA
Capacitance
C
1V
V
R
=1V, f=1MHz
19.0
-
21.0
pF
C
4V
V
R
=4V, f=1MHz
8.5
-
10.0
Capacitance Ratio
K
-
2.0
-
-
Series Resistance
r
S
V
R
=1V, f=470MHz
-
-
0.45
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| KDV262E | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING) |
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| KDV273E | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| KDV258E | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:SILICON EPITAXIAL PLANAR DIODE |
| KDV262 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING) |
| KDV262_03 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:SILICON EPITAXIAL PLANAR DIODE |
| KDV262E | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING) |
| KDV262E_03 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:SILICON EPITAXIAL PLANAR DIODE |
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