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參數(shù)資料
| 型號(hào)： | KGF1658 |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | Power FET (Ceramic Package Type)(陶瓷封裝型的功率場效應(yīng)晶體管) |
| 中文描述： | 功率場效應(yīng)晶體管（陶瓷封裝型）（陶瓷封裝型的功率場效應(yīng)晶體管） |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 70K |
| 代理商： | KGF1658 |
1/7
KGF1658
electronic components
KGF1658
Power FET (Ceramic Package Type)
GENERAL DESCRIPTION
The KGF1658, housed in a SMD-type ceramic package, is a discrete GaAs power FET that features
high efficiency and low distortion at 3 V. The KGF1658 specifications are guaranteed to a fixed
matching circuit of 3.4 V and 850 MHz; external impedance-matching circuits are also required.
The KGF1658 provides high efficiency (55% typical) and very low adjacent channel leakage
power with a 31 dBm output at 3.4 V. The device is optimized for transmitter-final-stage
amplifiers in Portable Handy Phones (PHPs) and other 3-V digital cellular phones that require
low distortion.
FEATURES
Low distortion: – 28 dBc typical (adjacent channel leakage power)
– 48 dBc typical (channel leakage power adjacent to the adjacent channel)
High efficiency: 50% (typ.)
Specifications quaranteed to a fixed matching circuit at 3.4 V, 850 MHz
Low thermal resistance: 18
°
C/W (typ.)
Package: 3PFP
Peimnay
E2Q0043-27-X2
This version: Jan. 1998
Previous version: Jun. 1996
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