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參數資料
| 型號： | KIC7WZ00FK |
| 廠商： | KEC Holdings |
| 英文描述： | SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT(2-INPUT NAND GATE) |
| 中文描述： | 硅單片CMOS數字集成電路（2輸入與非門） |
| 文件頁數： | 1/3頁 |
| 文件大小： | 78K |
| 代理商： | KIC7WZ00FK |
2002. 3. 7
1/3
SEMICONDUCTOR
TECHNICAL DATA
KIC7WZ08FK
SILICON MONOLITHIC CMOS
DIGITAL INTEGRATED CIRCUIT
Revision No : 1
2 INPUT AND GATE
FEATURES
High output drive :
24mA(min.) @V
CC
=3V.
Super high speed operation : tpd 2.4ns(typ.) @V
CC
=5V, 50pF.
Operation voltage range : V
CC(opr)
=1.65~5.5V.
Latch-up performance :
500mA or more
ESD performance :
200V or more (EIAJ)
2000V or more (MIL)
Power down protection is provided on all inputs and outputs.
DIM
A
B
C
MILLIMETERS
2.0 0.1
3.1 0.1
2.3 0.1
+
D
E
F
G
H
US8
0.5
0.2+0.05/-0.04
0.7 0.1
0.12 0.04
0 ~ 0.1
A
D
D
D
C
B
E
F
G
H
1
4
5
8
+
+
+
+
MAXIMUM RATINGS (Ta=25
)
MARKING
Lot No.
Z08
Type Name
CHARACTERISTIC
SYMBOL
RATING
UNIT
Power Supply Voltage
V
CC
-0.5~6
V
DC Input Voltage
V
IN
-0.5~6
V
DC Output Voltage
V
OUT
-0.5~6
V
Input Diode Current
I
IK
-20
mA
Output Diode Current
I
OK
-20
mA
DC Output Current
I
OUT
50
mA
DC V
CC
/ground Current
I
CC
50
mA
Power Dissipation
P
D
200
mW
Storage Temperature Range
T
stg
-65
150
Lead Temperature (10s)
T
L
260
PIN CONNECTION(TOP VIEW)
1
2
3
4
1Y
2B
2A
8
7
6
5
V
CC
1A
1B
2Y
GND
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