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參數資料
| 型號： | KIT-1001A |
| 廠商： | KODENSHI CORP. |
| 英文描述： | Photointerrupter(Transmissive) |
| 中文描述： | 光電斷路器（透射） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 63K |
| 代理商： | KIT-1001A |
FEATURES
PWB direct mount type
GAP : 1.0mm
Ultra - compact
APPLICATIONS
Cameras
Floppy disk drives
Encoders
ABSOLUTE MAXIMUM RATINGS
Parameter
(Ta=25
Unit
)
ELECTRO-OPTICAL CHARACTERISTICS
Parameter
(Ta=25
Unit
)
1/2
-
mA
Light Current (Collect Current)
I
L2
V
CE
=5V, I
F
= 5mA (Non-shading)
0.2
940
-
Photointerrupter(Transmissive)
KIT-1001A
KIT-1001A combines a high-output GaAs IRED with
a high sensitivity phototransistor.
DIMENSIONS
The photointerrupter high-performance standard type
75
mA
Reverse Current
260
T
SOL
Soldering Temperature
*3
*1. Pulse width : tw 100 sec.period : T=10msec
*3. For MAX. 5 seconds at the position of 1mm from the package
V
R
=5V
*2. No icebound or dew
Conditions
I
F
=20mA
Collector Current
Storage Temperature
*2
T
STG
Collector Power Dissipation
Operating Temperature
*2
T
OPR
I
C
I
F
V
R
I
FP
P
C
V
CEO
V
ECO
Symbol
Input
Output
Forward Current
Reverse Voltage
Pulse Forward Current
*1
Power Dissipation
Collector Emitter Voltage
P
D
Emitter Collector Voltage
V
V
-30 ~ +100
mW
-20 ~ +85
30
5
20
Rating
5
0.5
50
Dark Current
Input
Peak Wavelength
Symbol
V
F
Output
P
I
CEO
I
R
Forward Voltage
Coupled
Rise Time
Collector Emitter Saturation Voltage
Response Time
Fall Time
Leakage Current
tr
tf
I
L1
V
CE(SAT)
I
CEOD
V
CE
=5V, I
C
=1mA,
R
L
=100
-
-
10
-
μs
μs
V
0.15
-
0.4
10
I
F
=20mA
TYP.
1.2
I
F
=10mA, I
C
=0.3mA
-
-
-
MIN.
V
CE
=5V, I
F
=10mA (shading)
-
V
CE
=5V, I
F
=10mA (Non-shading)
-
1
-
0.5
V
CE
=10V, 0lx
-
100
DESCRIPTION
10
75
mW
mA
V
A
mA
nm
-
-
1.4
-
V
MAX.
A
10
0.5
A
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