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參數資料
| 型號： | KM23C8105DG |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M位(1Mx8 /512Kx16)掩膜ROM) |
| 中文描述： | 800萬位（1Mx8 / 512Kx16）的CMOS掩模ROM（800萬位（1Mx8 / 512Kx16）掩膜光盤） |
| 文件頁數： | 1/5頁 |
| 文件大小： | 91K |
| 代理商： | KM23C8105DG |
KM23C8105D(G)
CMOS MASK ROM
Pin Name
Pin Function
A
0
- A
1
Page Address Inputs
A
2
- A
18
Address Inputs
Q
0
- Q
14
Data Outputs
Q
15
/A
-1
Output 15(Word mode)/
LSB Address(Byte mode)
Word/Byte selection
BHE
CE
Chip Enable
OE
Output Enable
V
CC
Power ( +5V)
V
SS
Ground
N.C
No Connection
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
The KM23C8105D(G) is a fully static mask programmable ROM
fabricated using silicon gate CMOS process technology, and is
organized either as 1,048,576 x 8 bit(byte mode) or as 524,288
x 16 bit(word mode) depending on BHE voltage level.(See
mode selection table)
This device includes page read mode function, page read mode
allows 4 words (or 8bytes) of data to read fast in the same
page, CE and A
2
~ A
18
should not be changed.
This device operates with a 5V single power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The KM23C8105D is packaged in a 42-DIP and the
KM23C8105DG in a 44-SOP.
GENERAL DESCRIPTION
FEATURES
Switchable organization
1,048,576 x 8(byte mode)
524,288 x 16(word mode)
Fast access time
Random Access : 100ns(Max.)
Page Access : 30ns(Max.)
4 Words / 8 bytes page access
Supply voltage : single +5V
Current consumption
Operating : 80mA(Max.)
Standby : 50
μ
A(Max.)
Fully static operation
All inputs and outputs TTL compatible
Three state outputs
Package
-. KM23C8105D : 42-DIP-600
-. KM23C8105DG : 44-SOP-600
A
18
X
A
0~
A
1
A
-1
AND
DECODER
BUFFERS
A
2
Y
AND
DECODER
BUFFERS
MEMORY CELL
MATRIX
(524,288x16/
1,048,576x8)
SENSE AMP.
CONTROL
LOGIC
DATA OUT
BUFFERS
CE
OE
BHE
.
.
.
.
.
.
.
.
Q
0
/Q
8
Q
7
/Q
15
. . .
PIN CONFIGURATION
FUNCTIONAL BLOCK DIAGRAM
N.C
A
18
A
17
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
CE
V
SS
OE
Q
0
Q
8
Q
1
Q
9
Q
4
Q
12
Q
5
Q
13
Q
6
V
SS
Q
14
Q
7
Q
15
/A
-1
SOP
KM23C8105DG
1
2
44
43
3
4
42
41
5
6
40
39
7
8
38
37
9
10
36
35
34
11
12
33
13
14
32
31
15
16
30
29
17
18
28
27
19
20
26
25
21
22
24
23
Q
2
Q
10
Q
3
Q
11
N.C
N.C
A
8
A
9
A
10
A
11
A
12
A
13
A
14
A
15
A
16
BHE
V
CC
Q
11
A
18
A
17
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
CE
V
SS
OE
Q
0
Q
8
Q
1
Q
9
Q
2
DIP
KM23C8105D
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
Q
10
Q
3
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
Q
4
Q
12
Q
5
Q
13
Q
6
V
SS
Q
14
Q
7
Q
15
/A
-1
A
9
A
10
A
11
A
12
A
13
A
14
A
15
A
16
BHE
V
CC
N.C
A
8
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