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參數(shù)資料
| 型號(hào)： | KM23V4000DG |
| 廠(chǎng)商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M-Bit (512Kx8) CMOS Mask ROM(4M位 (512Kx8) CMOS掩膜ROM) |
| 中文描述： | 4分位（512Kx8）的CMOS掩模ROM（4分位（512Kx8）的CMOS掩膜光盤(pán)） |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 74K |
| 代理商： | KM23V4000DG |
KM23V4000D(G)
CMOS MASK ROM
Pin Name
Pin Function
A
0
- A
18
Address Inputs
Q
0
- Q
7
Data Outputs
CE
Chip Enable
OE
Output Enable
V
CC
Power
V
SS
Ground
N.C
No Connection
4M-Bit (512Kx8) CMOS MASK ROM
The KM23V4000D(G) is a fully static mask programmable ROM
organized 524,288 x 8 bit. It is fabricated using silicon gate
CMOS process technology.
This device operates with 3.0V or 3.3V power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The KM23V4000D is packaged in a 32-DIP and the
KM23C4000DG in a 32-SOP.
GENERAL DESCRIPTION
FEATURES
524,288 x 8 bit organization
Fast access time
3.3V Operation : 100ns(Max.)
3.0V Operation : 120ns(Max.)
Supply voltage : single +3.0V/ single +3.3V
Current consumption
Operating : 25mA(Max.)
Standby : 30
μ
A(Max.)
Fully static operation
All inputs and outputs TTL compatible
Three state outputs
Package
-. KM23V4000D : 32-DIP-600
-. KM23V4000DG : 32-SOP-525
A
18
X
AND
DECODER
BUFFERS
A
0
Y
AND
DECODER
BUFFERS
MEMORY CELL
MATRIX
(524,288x8)
SENSE AMP.
CONTROL
LOGIC
BUFFERS
CE
OE
.
.
.
.
.
.
.
.
Q
0
Q
7
. . .
PIN CONFIGURATION
N.C
A
16
A
15
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
CE
OE
Q
0
Q
1
Q
4
Q
5
Q
6
Q
7
A
9
A
10
A
11
DIP
&
SOP
KM23V4000D(G)
FUNCTIONAL BLOCK DIAGRAM
1
2
3
4
5
6
7
8
32
31
9
10
30
29
11
12
28
27
13
14
26
25
15
16
24
23
21
21
20
19
18
17
Q
2
V
SS
V
CC
A
18
A
17
A
14
A
13
A
8
Q
3
A
0
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| KM23V8105D | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM |
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