- 您現在的位置：買賣IC網 > PDF目錄374352 > KM23V8100DG (SAMSUNG SEMICONDUCTOR CO. LTD.) 8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M位(1Mx8 /512Kx16) CMOS掩膜ROM) PDF資料下載
參數資料
| 型號： | KM23V8100DG |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M位(1Mx8 /512Kx16) CMOS掩膜ROM) |
| 中文描述： | 800萬位（1Mx8 / 512Kx16）的CMOS掩模ROM（800萬位（1Mx8 / 512Kx16）的CMOS掩膜光盤） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 83K |
| 代理商： | KM23V8100DG |
KM23V8100D(G)
CMOS MASK ROM
Pin Name
Pin Function
A
0
- A
18
Address Inputs
Q
0
- Q
14
Data Outputs
Q
15
/A
-1
Output 15(Word mode)/
LSB Address(Byte mode)
BHE
Word/Byte selection
CE
Chip Enable
OE
Output Enable
V
CC
Power
V
SS
Ground
N.C
No Connection
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
The KM23V8100DG is a fully static mask programmable ROM
fabricated using silicon gate CMOS process technology, and is
organized either as 1,048,576 x 8 bit(byte mode) or as 524,288
x 16 bit(word mode) depending on BHE voltage level.(See
mode selection table)
This device operates with 3.0V or 3.3V power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The KM23V8100D is packaged in a 42-DIP and the
KM23V8100DG in a 44-SOP.
GENERAL DESCRIPTION
FEATURES
Switchable organization
1,048,576 x 8(byte mode)
524,288 x 16(word mode)
Fast access time :
3.3V operation : 100ns(Max.)
3.0V operation : 120ns(Max.)
Supply voltage : single +3.0V/ single +3.3V
Current consumption
Operating : 30mA(Max.)
Standby : 30
μ
A(Max.)
Fully static operation
All inputs and outputs TTL compatible
Three state outputs
Package
-. KM23V8100D : 42-DIP-600
-. KM23V8100DG : 44-SOP-600
A
18
X
AND
DECODER
BUFFERS
A
0
Y
AND
DECODER
BUFFERS
MEMORY CELL
MATRIX
(524,288x16/
1,048,576x8)
SENSE AMP.
CONTROL
LOGIC
DATA OUT
BUFFERS
A
-1
CE
OE
BHE
.
.
.
.
.
.
.
.
Q
0
/Q
8
Q
7
/Q
15
. . .
PIN CONFIGURATION
FUNCTIONAL BLOCK DIAGRAM
N.C
A
18
A
17
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
CE
V
SS
OE
Q
0
Q
8
Q
1
Q
9
SOP
KM23V8100DG
1
2
44
43
3
4
42
41
5
6
40
39
38
7
8
37
9
10
36
35
11
12
34
33
13
14
32
31
15
16
30
29
17
18
28
27
19
20
26
25
21
22
24
23
Q
2
Q
10
Q
3
Q
11
Q
11
A
18
A
17
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
CE
V
SS
OE
Q
0
Q
8
Q
1
Q
9
DIP
KM23V8100D
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
Q
2
Q
10
Q
3
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
Q
4
Q
12
Q
5
Q
13
Q
6
V
SS
Q
14
Q
7
Q
15
/A
-1
A
9
A
10
A
11
A
12
A
13
A
14
A
15
A
16
BHE
V
CC
N.C
A
8
Q
4
Q
12
Q
5
Q
13
Q
6
V
SS
Q
14
Q
7
Q
15
/A
-1
A
9
A
10
A
11
A
12
A
13
A
14
A
15
A
16
BHE
V
CC
N.C
A
8
N.C
相關PDF資料 |
PDF描述 |
|---|---|
| KM23V8105D | 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM |
| KM23V8105DG | 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM |
| KM28C64A | 8K x 8 BIT CMOS ELECTRICALLY ERASABLE PROM |
| KM28C65A | 8K x 8 BIT CMOS ELECTRICALLY ERASABLE PROM |
| KM29N040IT | 512K x 8 Bit NAND Flash Memory(512K x 8位 NAND閃速存儲器) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| KM23V8105D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM |
| KM23V8105DG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM |
| KM23V8105G | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM |
| KM-23YC | 制造商:KINGBRIGHT 制造商全稱:Kingbright Corporation 功能描述:SOT-23 SURFACE MOUNT LED LAMP |
| KM-23YC-F | 制造商:Kingbright Corporation 功能描述: |
發布緊急采購，3分鐘左右您將得到回復。