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參數資料
| 型號： | KM29U64000K1 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 8 Bit NAND Flash Memory(8M x 8位 NAND閃速存儲器) |
| 中文描述： | 8米× 8位NAND閃存（8米× 8位的NAND閃速存儲器） |
| 文件頁數： | 1/1頁 |
| 文件大小： | 16K |
| 代理商： | KM29U64000K1 |
PREDVA
KM29U64000K1
FLASH MEMORY DIE
- 1 -
FEATURES
8M x 8 Bit NAND Flash Memory
OPTIONS
Bare Die : Functionally test only
GENERAL ORDERING INFORMATION
8M
×
8 2.7V ~ 3.6V Bare Die KM29U64000K1
PACKAGING OPTIONS
Chip Trays (Waffle Pack)
FUNCTIONAL SPECIFICATIONS
Please refer to the packaged product data sheet found in the applicable SAMSUNG Flash Memory data book
for functional and parametric specifications. For bare die, these specifications are provided for reference only
and SAMSUNG makes no guarantees or warranties on level die.
ü
Voltage Supply : 2.7V ~ 3.6V
ü
Organization
- Memory Cell Array : (8M + 256K)bit x 8bit
- Data Register : (512 + 16)bit x8bit
ü
Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (8K + 256)Byte
ü
528-Byte Page Read Operation
ü
Command/Address/Data Multiplexed I/O port
ü
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
ü
Reliable CMOS Floating-Gate Technology
ü
Command Register Operation
RECOMMENDATION FOR SYSTEM DESIGN-IN
The KM29U64000K1 is recommended that the use of ECC(Error Correcting Code) and real time mapping-out
algorithm for the high reliability.
The KM29U64000K1 is an 8M(8,388,608)x8bit Die of NAND
Flash Memory with a spare 256K(262,144)x8bit. Its NAND cell
provides the most cost-effective solution for the solid state mass
storage system. A program operation could be program the 528-
byte simultaneously and an erase unit is an 8K-byte block. In
read operation can support fast serial read out mode upto 528-
byte. The I/O pins serve as the ports for address and data input/
output as well as command inputs. That multiplexed I/O inter-
face can reduced the control pin counts and it gives a benefit for
the use of Die product. The on-chip write controller automates all
program and erase functions including pulse repetition, where
required, and internal verify and margining of data. The
KM29U64000K1 is recommended that the use of ECC(Error
Correcting Code) and real time mapping-out algorithm for the
high reliability. These algorithms have been implemented in
many mass storage applications and also the spare 16 bytes of
a page combined with the other 512 bytes can be utilized by sys-
tem-level ECC.
The KM29U64000K1 is an optimum solution for large nonvolatile
storage applications such as solid state file storage, digital voice
recorder, digital still camera and other portable applications
requiring non-volatility.
GENERAL DESCRIPTION
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| KM29V16000AIT | FLASH MEMORY |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| KM29U64000T | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
| KM29V16000AIT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| KM29V16000AR | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M X 8 BIT NAND FLASH MEMORY |
| KM29V16000ARS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M X 8 BIT NAN FLASH MEMORY |
| KM29V16000AT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
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