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參數資料
| 型號： | KM29V16000AT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 8 Bit NAND Flash Memory(2M x 8位 NAND閃速存儲器) |
| 中文描述： | 200萬× 8位NAND閃存（2米× 8位的NAND閃速存儲器） |
| 文件頁數： | 1/23頁 |
| 文件大小： | 268K |
| 代理商： | KM29V16000AT |
KM29V16000AT, KM29V16000AIT
FLASH MEMORY
1
Document Title
2M x 8 Bit NAND Flash Memory
Revision History
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you ha ve
any questions, please contact the SAMSUNG branch office near you.
Revision No.
0.0
1.0
1.1
Remark
Final
History
Data Sheet, 1997.
Data Sheet, 1998.
1. Changed t
BERS
parameter : 5ms(Typ.)
→
2ms(Typ.).
2. Removed reverse type package.
3. The 1st block(00h block address) is guaranteed to be a good block.
4. Removed Suspend/Resume mode.
Data Sheet, 1998.
Draft Date
April 10th 1997
April 10th 1998
July 14th 1998
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|---|---|
| KM29V32000IT | FLASH MEMORY |
| KM29V32000TS | 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲器) |
| KM29V32000T | 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲器) |
| KM29V64000R | FLASH |
| KM29V64000TS | 8M X 8 BIT NAND FLSH MEMORY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| KM29V16000ATS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| KM29V32000IT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| KM29V32000T | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| KM29V32000TS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M X 8 BIT NAND FLASH MEMORY |
| KM29V64000R | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH |
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