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參數資料
| 型號： | KM616V1002AI |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 靜態 RAM(3.3V 工作)) |
| 中文描述： | 64K的× 16位高速CMOS靜態RAM（3.3V的工作）（64K的× 16位高速的CMOS靜態隨機存儲器（3.3V的工作）） |
| 文件頁數： | 1/9頁 |
| 文件大小： | 150K |
| 代理商： | KM616V1002AI |
KM616V1002A, KM616V1002AI
CMOS SRAM
PRELIMINARY
Rev 5.0
- 1 -
February 1998
Document Title
64Kx16 High Speed Static RAM(3.3V Operating), Revolutionary Pin out.
Operated at Commercial and Industrial Temperature Range.
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev. No.
Rev. 0.0
Rev. 1.0
Rev. 2.0
Rev. 3.0
Rev. 4.0
Rev. 5.0
Remark
Design Target
Preliminary
Final
Final
Final
Final
History
Initial release with Design Target.
Release to Preliminary Data Sheet.
1.1. Replace Design Target to Preliminary
Release to final Data Sheet.
2.1. Delete Preliminary
Add Low Power Product and update D.C parameters.
3.1. Add Low Power Products with I
SB1
=0.5mA and Data Retention
Mode(L-ver. only)
3.2. Update D.C parameters
Previous spec.
(12/15/17/20ns part)
Icc
200/190/180/170mA
I
SB
30mA
I
SB1
10mA
Add Industrial Temperature Range parts
4.1. Add Industrial Temperature Range parts with the same parame-
ters as Commercial Temperature Range parts.
4.1.1. Add KM616V1002AI/ALI parts for Industrial Temperature
Range.
4.1.2. Add ordering information.
4.1.3. Add the condition for operating at Industrial Temp. Range.
4.2. Add timing diagram to define t
WP1
as
″
(Timing Wave Form of
Write Cycle(OE=Low fixed)
″
5.1. Delete L-version.
5.2. Delete Data Retention Characteristics and Wavetorm.
5.3. Delete 17ns Part
5.4. Add Capacitive load of the test environment in A.C test load
Items
Updated spec.
(12/15/17/20ns part)
170/165/165/160mA
20mA
5mA
Draft Data
Jan. 18th, 1995
Apr. 22th, 1995
Feb. 29th, 1996
Jul. 16th, 1996
Jun. 2nd, 1997
Feb. 25th, 1998
相關PDF資料 |
PDF描述 |
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| KM616V1002B | 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 靜態 RAM(3.3V 工作)) |
| KM616V1002BI | 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 靜態 RAM(3.3V 工作)) |
| KM616V1002C | 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 靜態 RAM(3.3V 工作)) |
| KM616V1002CI | 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 靜態 RAM(3.3V 工作)) |
| KM616V4002B | 256K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(256K x 16 位高速CMOS 靜態 RAM(3.3V 工作)) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| KM616V1002AT-12 | 制造商:Samsung Electro-Mechanics 功能描述:Static RAM, 64Kx16, 44 Pin, Plastic, TSOP 制造商:SEC 功能描述:Static RAM, 64Kx16, 44 Pin, Plastic, TSOP |
| KM616V1002AT-15 | 制造商:SEC 功能描述:Static RAM, 64Kx16, 44 Pin, Plastic, TSOP |
| KM616V1002BT-10 | 制造商:SEC 功能描述: |
| KM616V4002BT15 | 制造商:SAMSUNG 功能描述:* |
| KM616V4002BT-15 | 制造商:Samsung Electro-Mechanics 功能描述:Static RAM, 256Kx16, 44 Pin, Plastic, TSOP 制造商:Seco Electronic Device 功能描述:Static RAM, 256Kx16, 44 Pin, Plastic, TSOP |
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