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參數資料
型號: KM62V256D
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 32K x 8 Bit Low Power CMOS Static RAM(32K x 8位低功耗CMOS 靜態RAM)
中文描述: 32K的× 8位低功耗CMOS靜態RAM(32K的× 8位低功耗的CMOS靜態RAM)的
文件頁數: 1/9頁
文件大小: 140K
代理商: KM62V256D
KM62V256D, KM62U256D Family
CMOS SRAM
Revision 1.0
November 1997
1
Document Title
32Kx8 bit Low Power and Low Voltage CMOS Static RAM
Revision History
Revision No.
0.0
1.0
Remark
Preliminary
Final
History
Initial draft
Finalize
- Add 70ns part in KM62U256D Family
- Show I
CC
read only, and increased value
I
CC
= 2mA
I
CC
Read = 5mA
- Seperate I
CC1
read and write
I
CC1
= 5mA
I
CC1
Read = 5mA, I
CC1
Write = 10mA
- Improved standby current(I
SB1
)
Commercial part : 10
μ
A
5
μ
A
Extended and Industrial part : 20
μ
A
5
μ
A
- Improved V
IL
(Min.) : 0.4V
0.6V
- Improved power dissipation : 0.7W
1W
Draft Data
April 1, 1997
November 12, 1997
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO, LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
相關PDF資料
PDF描述
KM641001A 256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 位(帶OE)高速CMOS 靜態 RAM)
KM641001B 256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 位(帶OE)高速CMOS 靜態 RAM)
KM641003A 256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 位(帶OE)高速CMOS 靜態 RAM)
KM641003B 256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 位(帶OE)高速CMOS 靜態 RAM)
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相關代理商/技術參數
參數描述
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