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參數資料
| 型號： | KM64V4002BI |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 4 Bit(with OE)High-Speed CMOS Static RAM(1M x 4 位(帶OE)高速CMOS 靜態 RAM) |
| 中文描述： | 100萬× 4位（與OE）的高速CMOS靜態RAM（100萬× 4位（帶OE）的高速的CMOS靜態RAM）的 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 137K |
| 代理商： | KM64V4002BI |
KM64V4002B/BL, KM64V4002BI/BLI
CMOS SRAM
PRELIMINARY
Rev 2.1
June 1998
- 1 -
Document Title
1Mx4 Bit (with OE) High Speed Static RAM(3.3V Operating), Revolutionary Pin out.
Operated at Commercial and Industrial Temperature Range.
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev No.
Rev. 0.0
Rev.1.0
Rev. 2.0
Rev.2.1
Remark
Design Target
Preliminary
Final
Final
History
Initial release with Design Target.
Release to Preliminary Data Sheet.
1. Replace Design Target to Preliminary.
Release to Final Data Sheet
1. Delete Preliminary
2. Add 30pF capacitive in test load
3. Relex DC characteristics
Item
I
CC
Change operating current at Industrial Temperature range.
Previous spec. Changed spec.
Items (10/12/15ns part) (10/12/15ns part)
I
CC
185/180/175mA 210/205/200mA
Previous
160mA
150mA
140mA
40mA
10 / 1mA
0.9mA
Current
185mA
180mA
175mA
50mA
10 / 1.2mA
1.0mA
10ns
12ns
15ns
f=max.
f=0
V
DR
=3.0V
I
SB
I
SB1
I
DR
Draft Data
Jan. 1st, 1997
Jun. 1st, 1997
Feb.11th.1998
Jun. 27th 1998
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