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參數資料
| 型號： | KM681001A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K x 8 Bit High-Speed CMOS Static RAM |
| 中文描述： | 128K的× 8位高速CMOS靜態RAM |
| 文件頁數： | 1/9頁 |
| 文件大小： | 165K |
| 代理商： | KM681001A |
KM681001A
CMOS SRAM
PRELIMINARY
Rev 5.0
- 1 -
February 1998
Document Title
128Kx8 High Speed Static RAM(5V Operating), Evolutionary Pin Out.
Operated at Commercial Temperature Range.
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev. No.
Rev. 0.0
Rev. 1.0
Rev. 2.0
Rev. 3.0
Rev. 4.0
Rev. 5.0
Remark
Design Target
Preliminary
Final
Final
Final
Final
History
Initial release with Design Target.
Release to Preliminary Data Sheet.
1.1. Replace Design Target to Preliminary
Release to final Data Sheet.
2.1. Delete Preliminary
Update D.C and A.C parameters.
3.1. Update D.C parameters
3.2. Update A.C parameters
Update D.C and A.C parameters and add 300mil-SOJ PKG.
4. 1. Add 32-Pin 300mil-SOJ Package.
4. 2. Update D.C and A.C parameters.
Previous spec.
(15/17/20ns part)
Icc
165/165/160mA
t
OW
3/4/5ns
4.3. Add the test condition for Voh1 with Vcc=5V
±
5% at 25
°
C
4.4. Add timing diagram to define tWP1 as
″(
Timing Wave Form of
Write Cycle(OE=Low Fixed)
″
5.1. Delete 17ns Part
5.2. Delete 32-SOJ-300 Package
Items
Previous spec.
(15/17/20ns part)
190/180/170mA
30mA
10mA
Updated spec.
(15/17/20ns part)
165/165/160mA
25mA
8mA
Icc
Isb
Isb1
Items
Previous spec.
(15/17/20ns part)
12/12/13ns
12/12/13ns
12/12/13ns
8/9/10ns
Updated spec.
(15/17/20ns part)
10/11/12ns
10/11/12ns
10/11/12ns
7/8/9ns
t
CW
t
AW
t
WP1
(OE=H)
t
DW
Items
Updated spec.
(15/17/20ns part)
125/125/120mA
3/3/3ns
Draft Data
Jan. 18th, 1995
Apr. 22th, 1995
Feb. 29th, 1996
Jul. 16th, 1996
Jun. 2nd, 1997
Feb. 25th, 1998
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