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參數(shù)資料
型號(hào): KM681002BJ-12
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range.
中文描述: 128Kx8位高速靜態(tài)RAM(5V的工作),革命銷出。在經(jīng)營商業(yè)和工業(yè)溫度范圍。
文件頁數(shù): 1/8頁
文件大小: 171K
代理商: KM681002BJ-12
KM681002B, KM681002BI
CMOS SRAM
PRELIMINARY
PPreliminary
Rev 2.0
- 1 -
February 1998
Document Title
128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out.
Operated at Commercial and Industrial Temperature Range.
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquart ers.
Rev No.
Rev. 0.0
Rev.1.0
Rev.2.0
Remark
Design Target
Preliminary
Final
History
Initial release with Design Target.
Release to Preliminary Data Sheet.
1. Replace Design Target to Preliminary.
Release to Final Data Sheet.
2.1. Delete Preliminary
2.2. Delete 32-SOJ-300 package
2.3. Delete L-version.
2.4. Delete Data Retention Characteristics and Waveform.
2.5. Add Capacitive load of the test environment in A.C test load
2.6. Change D.C characteristics
Previous spec.
(8/10/12ns part)
Icc
160/150/140mA
Isb
30mA
Items
Changed spec.
(8/10/12ns part)
160/155/150mA
50mA
Draft Data
Apr. 1st, 1997
Jun. 1st, 1997
Feb. 25th, 1998
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