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參數資料
| 型號： | KM684002I-25 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
| 中文描述： | 512Kx8位高速靜態RAM（5V的工作），革命銷出。在商業經營，擴展和工業溫度范圍。 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 149K |
| 代理商： | KM684002I-25 |
KM684002, KM684002E, KM684002I
Document Title
512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out.
Operated at Commercial, Extended and Industrial Temperature Range.
Revision History
CMOS SRAM
PRELIMINARY
Rev 3.0
June -1997
- 1 -
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this
device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev No.
Rev. 0.0
Rev. 1.0
Rev. 2.0
Rev. 3.0
Remark
Preliminary
Final
Final
Final
History
Initial release with Preliminary.
Release to final Data Sheet.
1.1. Delete Preliminary
2.1. Delete 15ns part
2.2. Add 17ns part.
2.3.Add the test condition for Voh
1
with Vcc=5V
±
5% at 25
°
C
3.1.Delete Low power product with Data Retention Mode.
3.1.1. Delete Data Retention Characteristics
3.2.Add Industrial and Extended Temperature Range parts with the
same parameters as Commercial Temperature Range parts.
3.2.1 Add KM684002I for Industrial Temperature Range.
3.2.2.Add KM684002E for Extended Temperature Range.
3.2.3.Add ordering information.
3.2.4. Add the condition for operating at Industrial and Extended
Temperature Range.
3.3.Add timing diagram to define t
WP
as
″(
Timing Wave Form of
Write Cycle(CS=Controlled)
″
Draft Data
Jun. 1th, 1991
Oct. 4th, 1993
Apr. 2th, 1994
Jun. 17th, 1997
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相關代理商/技術參數 |
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