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參數資料
| 型號： | KM68V1000BLTE-10 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| 中文描述： | 128K的× 8位低功耗和低電壓的CMOS Statinc內存 |
| 文件頁數： | 1/10頁 |
| 文件大?。?/td> | 183K |
| 代理商： | KM68V1000BLTE-10 |
KM68V1000B, KM68U1000B Family
CMOS SRAM
Revision 2.0
March 1998
Document Title
128K x8 bit Low Power and Low Voltage CMOS Static RAM
Revision History
Revision No.
0.0
1.0
2.0
Remark
Preliminary
Final
Final
History
Initial draft
Finalize
Revise
- Change datasheet format
Draft Data
August 12, 1995
April 12, 1996
March 7, 1998
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
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相關代理商/技術參數 |
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| KM68V1000BLTE-10L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BLTE-7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BLTE-7L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BLTI-10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BLTI-10L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
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