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參數資料
| 型號： | KMM366S104CTL |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Mx64 SDRAM DIMM(1Mx64 動態 RAM模塊) |
| 中文描述： | 1Mx64 SDRAM的內存（1Mx64動態內存模塊） |
| 文件頁數： | 1/13頁 |
| 文件大小： | 138K |
| 代理商： | KMM366S104CTL |
KMM366S104CTL
REV. 3 Mar. '98
PC66 SDRAM MODULE
Revision History
Revision .3 (Mar. 1998)
Some Parameter values & Characteristics of comp. level are changed as below :
- Input leakage currents (Inputs) :
±
5uA to
±
1uA.
- Input leakage currents (I/O) :
±
5uA to
±
1.5uA.
- Cin to be measured at V
DD
= 3.3V, T
A
= 23
°
C
,
f = 1MHz, V
REF
= 1.4V
±
200mV.
- AC Operating Condition is changed as defined :
V
IH
(max) = 5.6V AC. The overshoot voltage duration is
≤
3ns.
V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
2K/32ms is changed to 4K/64ms.
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相關代理商/技術參數 |
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|---|---|
| KMM366S1623AT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| KMM366S1623AT-G0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| KMM366S1623AT-G2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| KMM366S1623AT-G8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| KMM366S1623BT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:PC100 SDRAM MODULE |
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