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參數資料
| 型號： | KMM5328004CSWG |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V |
| 中文描述： | 8米× 32的DRAM上海藥物研究所使用4Mx16，4K的刷新，5V的 |
| 文件頁數： | 1/19頁 |
| 文件大小： | 406K |
| 代理商： | KMM5328004CSWG |
DRAM MODULE
KMM5328004BSW/BSWG
KMM5328004BSW/BSWG EDO Mode
8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
The Samsung KMM5328004B is a 8Mx32bits Dynamic RAM
high density memory module. The Samsung KMM5328004B
consists of four CMOS 4Mx16bits DRAMs in TSOP packages
mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF
decoupling capacitor is mounted on the printed circuit board
for each DRAM. The KMM5328004B is a Single In-line Mem-
ory Module with edge connections and is intended for mount-
ing into 72 pin edge connector sockets.
Part Identification
- KMM5328004BSW(4K cycles/64ms Ref, TSOP, Solder)
- KMM5328004BSWG(4K cycles/64ms Ref, TSOP, Gold)
Extended Data Out Mode Operation
CAS-before-RAS & Hidden Refresh capability
RAS-only refresh capability
TTL compatible inputs and outputs
Single +5V
±
10% power supply
JEDEC standard PDpin & pinout
PCB : Height(1000mil), double sided component
GENERAL DESCRIPTION
FEATURES
PERFORMANCE RANGE
Speed
t
RAC
t
CAC
t
RC
t
HPC
-5
50ns
13ns
84ns
20ns
-6
60ns
15ns
104ns
25ns
PIN NAMES
Pin Name
Function
A0 - A11
Address Inputs
DQ0-7, DQ9-16
DQ18-25, DQ27-34
Data In/Out
W
Read/Write Enable
RAS0 - RAS3
Row Address Strobe
CAS0 - CAS3
Column Address Strobe
PD1 -PD4
Presence Detect
Vcc
Power(+5V)
Vss
Ground
NC
No Connection
PRESENCE DETECT PINS (Optional)
Pin
50NS
60NS
PD1
PD2
PD3
PD4
NC
Vss
Vss
Vss
NC
Vss
NC
NC
PIN CONFIGURATIONS
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
Symbol
V
SS
DQ0
DQ18
DQ1
DQ19
DQ2
DQ20
DQ3
DQ21
Vcc
NC
A0
A1
A2
A3
A4
A5
A6
A10
DQ4
DQ22
DQ5
DQ23
DQ6
DQ24
DQ7
DQ25
A7
A11
Vcc
A8
A9
RAS3
RAS2
NC
NC
Pin
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
Symbol
NC
NC
Vss
CAS0
CAS2
CAS3
CAS1
RAS0
RAS1
NC
W
NC
DQ9
DQ27
DQ10
DQ28
DQ11
DQ29
DQ12
DQ30
DQ13
DQ31
Vcc
DQ32
DQ14
DQ33
DQ15
DQ34
DQ16
NC
PD1
PD2
PD3
PD4
NC
Vss
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
相關PDF資料 |
PDF描述 |
|---|---|
| KMM5328004CSW | 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V |
| KMM5361203C2W | 1M x 36 DRAM SIMM(1M x 36 動態 RAM模塊) |
| KMM53616000BK | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| KMM53616000CK | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| KMM53616000BKG | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
相關代理商/技術參數 |
參數描述 |
|---|---|
| KMM5328100CK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V |
| KMM5328100CKG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V |
| KMM5361203C2W | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh |
| KMM5361203C2WG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh |
| KMM5361205C2W | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh |
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