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SILICON TRANSISTOR
KN4xxx
RESISTOR BUILT-IN TYPE PNP TRANSISTOR
DATA SHEET
Document No. D16489EJ3V0DS00 (3rd edition)
Date Published October 2004 NS CP(K)
Printed in Japan
2002
The mark
shows major revised points.
FEATURES
Compact package
Resistors built-in type
Complementary to KA4xxx
ORDERING INFORMATION
PART NUMBER
PACKAGE
KN4xxx
SC-75 (USM)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Collector to Base Voltage
V
CBO
60
V
Collector to Emitter Voltage
V
CEO
50
V
Emitter to Base Voltage
V
EBO
5
V
Collector Current (DC)
I
C
0.1
A
Collector Current (pulse)
Note
I
C(pulse)
0.2
A
Total Power Dissipation
P
T
0.15
W
Junction Temperature
T
j
150
°C
Storage Temperature
Note
PW
≤
10 ms, Duty Cycle
≤
50%
T
stg
–55 to +150
°C
PART NUMBER
MARK
R
1
R
2
UNIT
PART NUMBER
MARK
R
1
R
2
UNIT
KN4A4M
A7
10.0
10.0
k
KN4L4L
K7
47.0
22.0
k
KN4F4M
B7
22.0
22.0
k
KN4A4Z
Y7
10.0
k
KN4L4M
C7
47.0
47.0
k
KN4F4Z
Z7
22.0
k
KN4L3M
D7
4.7
4.7
k
KN4L4Z
N7
47.0
k
KN4L3N
E7
4.7
10.0
k
KN4F3M
P7
2.2
2.2
k
KN4L3Z
F7
4.7
k
KN4F3P
Q7
2.2
10.0
k
KN4A3Q
G7
1.0
10.0
k
KN4F3R
R7
2.2
47.0
k
KN4A4P
H7
10.0
47.0
k
KN4A4L
S7
10.0
4.7
k
KN4F4N
X7
22.0
47.0
k
KN4L4K
T7
47.0
10.0
k
PACKAGE DRAWING (Unit: mm)
0.6
0.75
±
0.05
0 to 0.1
0.15
+0.1
1
0
0.5
2
1
3
1.0
1.6 ± 0.1
0.2
+0.1
–0
0.5
0.3
+0.1
–0
EQUIVALENT CIRCUIT
2
R
1
R
2
1
3
PIN CONNECTION
1: Emitter
2: Base
3: Collector