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參數資料
| 型號： | KP035J |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | 500mW InGaP HBT Amplifier |
| 中文描述： | 500mW的InGaP HBT寬頻放大器 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 193K |
| 代理商： | KP035J |
Features
·1.8 to 2.5GHz Frequency Band
·+26.5dBm Output Power
·+43dBm Output IP3
·+5V Single Supply Voltage
·14dB Gain at 2.14GHz
·Highly Reliable InGaP HBT
·Pb-free SOT-89 SMT Package
·AuSn Die Attach for Low and
Stable Thermal Resistance
Applications
·Wireless communication system
·Cellular, PCS, PHS, W-CDMA, WLAN
Description
T
Specifications and information are subject to change without notice. 2005-07
Eudyna Devices Inc. 1,Kanai-cho, Sakae-ku, Yokohama, 244-0845 Japan
Phone : +81-45-853-8150 Fax : +81-45-853-8170 e-mail : www-sales-s@eudyna.com Web Site : www.eudyna.com
echnical Note
P02221B2P
500mW InGaP HBT Amplifier
P02221B2P is a high performance InGaP/GaAs HBT
amplifier housed in a low-cost SOT-89 package. The
hetero-junction epitaxial structure has been designed to
achieve low distortion, which leads to high IP3. The device
needs only a +5V single power supply voltage in operation.
Utilization of AuSn die attach has realized a low and stable
thermal resistance.
Functional Diagram
Pin No.
1
2, 4
3
Function
RF Input
Ground
RF Output
Ordering Information
Part No
Description
HBT Amplifier
2.14GHz
Application Circuit
Number
of devices
1000
Container
7” Reel
Anti-static
Bag
P02221B2P
KP035J
1
Absolute Maximum Ratings
(@Tc=25°C)
Parameter
Device Voltage
Device Current
RF Input Power
(continuous)
Power Dissipation
Junction Temperature
Storage Temperature
Tc: Case Temperature. Operating the device beyond any of these
values may cause permanent damage.
Symbol
Vd
Id
Value
6
500
Units
V
mA
Pin
15
dBm
Pt
Tj
Tstg
2
W
°C
°C
+150
- 40 to +150
Electrical Specifications (@Tc=
+
25°C, Vs=
+
5V)
Measured at 2140MHz using application circuit.
Values
Typ.
294
Parameter
Symbol
Test Conditions
Min.
247
Max.
341
Units
Consumption Current
Is
RF=off
mA
IP3_12
Pout=12dBm S.C.L.
---
43
---
dBm
Output IP3
IP3_15
Pout=15dBm S.C.L.
38.5
41
---
dBm
Output Power
@ 1dB Gain Compression
Small Signal Gain
P1dB
---
24.5
26.5
---
dBm
Ga
12.5
14
---
dB
Input Return Loss
S11
---
-10
---
dB
Output Return Loss
S22
Pin=-10dBm
---
-8
---
dB
Thermal Resistance
Rth
Junction-Case
---
37
---
°C/W
4
3
1
2
-1-
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