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參數資料
型號: KRA764U
廠商: KEC Holdings
英文描述: EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
中文描述: 外延平面PNP晶體管(開關,接口電路及驅動電路)
文件頁數: 1/4頁
文件大小: 50K
代理商: KRA764U
2002. 7. 9
1/4
SEMICONDUCTOR
TECHNICAL DATA
KRA760U~KRA764U
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
DIM
MILLIMETERS
+
+
+
A
B
D
G
US6
2.00 0.20
1.25 0.1
0.65
2.1 0.1
0.2+0.10/-0.05
0-0.1
+
0.9 0.1
0.15+0.1/-0.05
B1
C
H
T
G
1
3
2
B
B1
D
A
H
T
6
4
C
C
A
1.3 0.1
A1
5
+
1. Q EMITTER
2. Q BASE
4. Q EMITTER
5. Q BASE
6. Q COLLECTOR
3. Q COLLECTOR
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25
)
MARK SPEC
R1
C
E
B
Type Name
1
2
3
6
5
4
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-50
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-100
mA
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector Power Dissipation
P
C
*
200
mW
Junction Temperature
T
j
150
Storage TemperatureRange
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-50V, I
E
=0
-
-
-100
nA
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-100
nA
DC Current Gain
h
FE
V
CE
=-5V, I
C
=-1mA
120
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-10mA, I
B
=-0.5mA
-
-0.1
-0.3
V
Transition Frequency
f
T
*
V
CE
=-10V, I
C
=-5mA
-
250
-
MHz
Input Resistor
KRA760U
KRA761U
KRA762U
KRA763U
R
1
-
-
-
-
4.7
10
100
22
-
-
-
-
k
KRA764U
-
47
-
TYPE
KRA760U
KRA761U
KRA762U
KRA763U
KRA764U
MARK
PK
PM
PN
PO
PP
EQUIVALENT CIRCUIT (TOP VIEW)
1
Q1
2
3
6
5
4
Q2
Marking
* Total Rating.
相關PDF資料
PDF描述
KRC101 EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
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KRC102M EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
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