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參數資料
| 型號： | KRX105U |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN/PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) |
| 中文描述： | 外延平面npn型/ PNP晶體管（開關，接口電路及驅動電路） |
| 文件頁數： | 1/3頁 |
| 文件大小： | 438K |
| 代理商： | KRX105U |
2002. 5. 8
1/3
SEMICONDUCTOR
TECHNICAL DATA
KRX105U
Revision No : 2
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
Including two devices in USV.
(Ultra Super mini type with 5 leads.)
With Built-in bias resistors.
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
DIM
A
A1
MILLIMETERS
2.00 0.20
1.3 0.1
+
+
+
B
D
G
H
T
USV
1.25 0.1
0.65
2.1 0.1
0.2+0.10/-0.05
0-0.1
0.9 0.1
0.15+0.1/-0.05
B1
C
G
1
3
2
B
B1
D
A
H
T
5
4
C
C
A
+
+
1. Q COMMON (EMITTER)
2. Q IN (BASE)
3. Q COMMON (EMITTER)
4. Q OUT (COLLECTOR)
5. Q OUT (COLLECTOR)
Q IN (BASE)
EQUIVALENT CIRCUIT
Q
1
MAXIMUM RATING (Ta=25
)
R1
C
E
B
R1
C
E
B
Q
1
R1=4.7K
(Q , Q COMMON)
Q
2
1
Q1
2
3
5
4
Q2
EQUIVALENT CIRCUIT (TOP VIEW)
* Total Raing.
BE
Type Name
1
2
3
4
5
Q
2
MAXIMUM RATING (Ta=25
)
Q
1
, Q
2
MAXIMUM RATING (Ta=25
)
CHARACTERISTIC
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
RATING
50
50
5
100
UNIT
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
CHARACTERISTIC
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
RATING
-50
-50
-5
-100
UNIT
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
CHARACTERISTIC
SYMBOL
P
C
*
T
j
T
stg
RATING
200
150
UNIT
Power Dissipation
Junction Temperature
Storage Temperature Range
-55
150
Marking
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
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