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參數資料
| 型號： | KRX205E |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN/PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) |
| 中文描述： | 外延平面npn型/ PNP晶體管（開關，接口電路及驅動電路） |
| 文件頁數： | 1/3頁 |
| 文件大小： | 81K |
| 代理商： | KRX205E |
2002. 1. 24
1/3
SEMICONDUCTOR
TECHNICAL DATA
KRX205E
Revision No : 1
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
Including two devices in TES6.
(Thin Extreme Super mini type with 6 pin.)
With Built-in bias resistors.
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
DIM
A
A1
B
MILLIMETERS
1.6 0.05
1.0 0.05
1.6 0.05
1.2 0.05
0.50
0.2 0.05
0.5 0.05
0.12 0.05
5
B1
C
D
H
J
P
TES6
B1
B
D
A
A
C
C
J
H
1
2
3
6
4
P
P
5
+
+
+
+
+
+
+
1. Q COMMON (EMITTER)
2. Q IN (BASE)
4. Q COMMON (EMITTER)
5. Q IN (BASE)
6. Q OUT (COLLECTOR)
3. Q OUT (COLLECTOR)
EQUIVALENT CIRCUIT
Q1 MAXIMUM RATING (Ta=25
)
CHARACTERISTIC
R1
COMMON
OUT
Q
1
IN
R1
COMMON
OUT
Q
2
2
IN
Q , Q
R1=4.7K
1
Q1
2
3
6
5
4
Q2
EQUIVALENT CIRCUIT (TOP VIEW)
* Total Raing.
SYMBOL
RATING
UNIT
Collectoor-Base Voltage
V
CBO
V
CEO
V
EBO
I
C
50
V
Collector-Emitter Voltage
50
V
Emitter-Base Voltage
5
V
Collector Current
100
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector Power Dissipation
P
C
*
T
j
T
stg
200
Junction Temperature
150
Storage Temperature Range
-55
150
BE
Type Name
1
2
3
4
6
5
Q2 MAXIMUM RATING (Ta=25
)
Q1, Q2 MAXIMUM RATING (Ta=25
)
Marking
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collectoor-Base Voltage
V
CBO
V
CEO
V
EBO
I
C
-50
V
Collector-Emitter Voltage
-50
V
Emitter-Base Voltage
-5
V
Collector Current
-100
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