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參數(shù)資料
| 型號： | KSC1008YD74Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 700 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 158K |
| 代理商： | KSC1008YD74Z |
KSC1008
NPN EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY AMPLIFIER
MEDIUM SPEED SWITCHING
Complement to KSA708
High Collector-Base Voltage: V
CBO
=80V
Collector Current: I
C
=700mA
Collector Dissipation: P
C
=800mW
ABSOLUTE MAXIMUM RATINGS (T
A
=25
°
C)
ELECTRICAL CHARACTERISTICS (T
A
=25
°
C)
h
FE
CLASSIFICATION
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
80
60
8
700
800
150
-55 ~ 150
V
V
V
mA
mW
°
C
°
C
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
I
C
=100
μ
A, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10
μ
A, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=2V, I
=50mA
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
=50mA
V
CE
=10V, I
C
=50mA
V
=10V, I
E
=0
f=1MHz
80
60
8
40
30
0.2
0.86
50
8
0.1
0.1
400
0.4
1.1
V
V
V
μ
A
μ
A
V
V
MHz
pF
Classification
R
O
Y
G
h
FE
40-80
70-140
120-240
200-400
TO-92
1. Emitter 2. Base 3. Collector
1999 Fairchild Semiconductor Corporation
Rev. B
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KSC1008YTA | 功能描述:兩極晶體管 - BJT NPN Epitaxial Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSC1008YTA_Q | 功能描述:兩極晶體管 - BJT NPN Epitaxial Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSC1008YTAM | 功能描述:兩極晶體管 - BJT DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSC1008YTF | 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSC1009 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High Voltage Amplifier |
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