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參數資料
| 型號： | KSC5327J69Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3.5 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 34K |
| 代理商： | KSC5327J69Z |
NPN TRIPLE DIFFUSED
KSC5327 PLANER SILICON TRANSISTOR
HIGH VOLTAGE POWER SWITCH
SWITCHING APPLICATION
High Speed Switching
Wide SOA
High Collector-Base Voltage
ABSOLUTE MAXIMUM RATINGS
* Pulse Test: Pulse Width = 5ms, Duty Cycle
≤
10%
ELECTRICAL CHARACTERISTICS
(T
C
=25
°
C)
THERMAL CHARACTERISTICS
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Rating
1200
800
7
3.5
10
1.5
60
150
-65 ~ 150
Unit
V
V
V
A
A
A
W
°
C
°
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
Characteristic
Symbol
BV
CBO
BV
CEO
BV
EEO
I
CBO
I
EBO
h
FE
1
h
FE
2
V
CE
(sat)
V
BE
(sat)
Test Conditions
I
C
= 1mA, I
E
= 0
I
C
= 5mA, I
B
=0
I
E
= 1mA, I
C
= 0
V
CB
= 1200V, I
E
= 0
V
EB
= 7V, I
C
= 0
V
CE
= 5V, I
C
= 0.2A
V
CE
= 5V, I
C
= 0.8A
I
C
= 1A, I
B
= 0.2A
I
C
= 1A , I
B
= 0.2A
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CC
= 400V,
I
C
= 2A = 5I
B1
= -2.5
I
B2
R
L
= 200
Min
1200
800
7
Typ
Max
Unit
V
V
V
μ
A
μ
A
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut off Current
Emitter Cutoff Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Output Capacitance
Turn On Time
Storage Time
Fall Time
C
OB
t
ON
t
STG
t
F
10
8
50
10
10
40
2.0
1.5
0.5
2.0
0.25
V
V
pF
μ
s
μ
s
μ
s
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
jC
2.08
°
C/W
TO-220
1999 Fairchild Semiconductor Corporation
Rev. B
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