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參數資料
| 型號： | KSC5504D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage High Speed Power Switch Application |
| 中文描述： | 4 A, 600 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 1/10頁 |
| 文件大小： | 104K |
| 代理商： | KSC5504D |
2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
K
1
1.Base 2.Collector 3.Emitter
1
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
*Collector Current (Pulse)
I
B
Base Current (DC)
I
BP
*Base Current (Pulse)
P
C
Collector Dissipation (T
C
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
E
AS
Avalanche Energy(T
j
=25
°
C)
* Pulse Test : Pulse Width = 5ms, Duty Cycle
≤
10%
Thermal Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
R
θ
jc
Thermal Resistance
R
θ
ja
T
L
Maximun Lead Temperature for Soldering Purpose
: 1/8” from Case for 5 seconds
Parameter
Value
1200
600
12
4
8
2
4
75
150
- 65 ~ 150
3
Units
V
V
V
A
A
A
A
W
°
C
°
C
mJ
Characteristics
Junction to Case
Junction to Ambient
Rating
1.65
62.5
270
Unit
°
C/W
°
C
KSC5504D/KSC5504DT
High Voltage High Speed Power Switch
Application
Wide Safe Operating Area
Built-in Free-Wheeling Diode
Suitable for Electronic Ballast Application
Small Variance in Storage Time
Two Package Choices : D2-PAK or TO-220
D2-PAK
TO-220
C
B
E
Equivalent Circuit
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相關代理商/技術參數 |
參數描述 |
|---|---|
| KSC5504DT | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High Voltage High Speed Power Switch Application |
| KSC5504DTM | 功能描述:兩極晶體管 - BJT NPN HI-VOLT HI-SPEED D2PAK RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSC5504DTTU | 功能描述:兩極晶體管 - BJT NPN HI-VOLT HI-SPEED RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSC5603D | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSC5603D_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Silicon Transistor, Planar Silicon Transistor |
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