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參數資料
| 型號： | KSH112 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | D-PAK for Surface Mount Applications |
| 中文描述： | 2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 57K |
| 代理商： | KSH112 |
2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
K
NPN Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
Collector Current (Pulse)
I
B
Base Current
P
C
Collector Dissipation (T
C
=25
°
C)
Collector Dissipation (T
a
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
V
CEO
(sus)
Collector-Emitter Sustaining Voltage
I
CEO
Collector Cut-off Current
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
* DC Current Gain
* Pulse Test: PW
≤
300
μ
s, Duty Cycle
≤
2%
Value
100
100
5
2
4
50
20
1.75
150
- 65 ~ 150
Units
V
V
V
A
A
mA
W
W
°
C
°
C
Test Condition
I
C
= 30mA, I
B
= 0
V
CE
= 50V, I
B
= 0
V
CB
= 100V, I
B
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 3V, I
C
= 0.5A
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 4A
I
C
= 2A, I
B
= 8mA
I
C
= 4A, I
B
= 40mA
I
C
= 4A, I
B
= 40mA
V
CE
= 3A, I
C
= 2A
V
CE
= 10V, I
C
= 0.75A
V
CB
= 10V, I
E
= 0
f = 0.1MHz
Min.
100
Max.
Units
V
μ
A
μ
A
mA
20
20
2
500
1000
200
12K
V
CE
(sat)
* Collector-Emitter Saturation Voltage
2
3
4
2.8
V
V
V
V
V
BE
(sat)
V
BE
(on)
f
T
C
ob
* Base-Emitter Saturation Voltage
* Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
25
MHz
pF
100
KSH112
D-PAK for Surface Mount Applications
High DC Current Gain
Built-in a Damper Diode at E-C
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, “ - I “ Suffix)
Electrically Similar to Popular TIP112
1.Base 2.Collector 3.Emitter
R1
R2
10k
0.6k
Equivalent Circuit
B
E
C
R1
R2
D-PAK
I-PAK
1
1
相關PDF資料 |
PDF描述 |
|---|---|
| KSH112-I | D-PAK for Surface Mount Applications |
| KSH117 | D-PAK for Surface Mount Applications |
| KSH117-I | D-PAK for Surface Mount Applications |
| KSH122-I | D-PAK for Surface Mount Applications |
| KSH122 | D-PAK for Surface Mount Applications |
相關代理商/技術參數 |
參數描述 |
|---|---|
| KSH112GTM | 功能描述:達林頓晶體管 NPN Si Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| KSH112GTM_NB82051 | 功能描述:達林頓晶體管 NPN Si Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| KSH112GTM_SB82051 | 功能描述:達林頓晶體管 NPN Si Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| KSH112I | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:D-PAK for Surface Mount Applications |
| KSH112-I | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:D-PAK for Surface Mount Applications |
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